Abstract
We investigated the temperature-dependent conductance of a long and narrow high-mobility channel, which is formed from an AlGaAs/GaAs heterostructure using the split-gate technique. When the channel is wider than 100 nm, in the range of 1-10 K we observe logarithmic temperature dependence, which is a key signature of the interaction correction in the quasi-one-dimensional weakly-disordered Fermi liquid. For the narrowest channels with width smaller than 100 nm, we observe power-law dependences, which are typical for the Luttinger liquid. The crossover from the weakly-disordered Fermi liquid to the Luttinger liquid takes place when the channel width corresponds to 2-3 one-dimensional subbands.
| Original language | English |
|---|---|
| Article number | 012116 |
| Journal | Journal of Physics: Conference Series |
| Volume | 193 |
| DOIs | |
| State | Published - 2009 |
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