Ytterbium metal-insulator-semiconductor contacts to indium phosphide

K. C. Reinhardt; A. Singh; W. A. Anderson

doi:10.1016/0038-1101(88)90027-5

Ytterbium metal-insulator-semiconductor contacts to indium phosphide

K. C. Reinhardt
, A. Singh
, W. A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Yb has been shown to form high quality rectifying contacts to p-InP and linear, low resistance contacts to fn-InP. The Yb-rectifying contacts gave a barrier height of 1.03-1.04 eV by C-V, and ideality factor of 1.25 with a 10 Å interfacial oxide and reverse saturation current density of 2-3 × 10^-9 A/cm². As a temperature sensor, the contact gave a sensitivity of 2.4 mV/K with linearity from 100 to 450 K. The low resistance contact to n-InP has a resistance of 0.02 Ω-cm² on undoped material.

Original language	English
Pages (from-to)	1537-1539
Number of pages	3
Journal	Solid State Electronics
Volume	31
Issue number	10
DOIs	https://doi.org/10.1016/0038-1101(88)90027-5
State	Published - Oct 1988

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title = "Ytterbium metal-insulator-semiconductor contacts to indium phosphide",

abstract = "Yb has been shown to form high quality rectifying contacts to p-InP and linear, low resistance contacts to fn-InP. The Yb-rectifying contacts gave a barrier height of 1.03-1.04 eV by C-V, and ideality factor of 1.25 with a 10 {\AA} interfacial oxide and reverse saturation current density of 2-3 × 10-9 A/cm2. As a temperature sensor, the contact gave a sensitivity of 2.4 mV/K with linearity from 100 to 450 K. The low resistance contact to n-InP has a resistance of 0.02 Ω-cm2 on undoped material.",

author = "Reinhardt, \{K. C.\} and A. Singh and Anderson, \{W. A.\}",

year = "1988",

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doi = "10.1016/0038-1101(88)90027-5",

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volume = "31",

pages = "1537--1539",

journal = "Solid State Electronics",

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T1 - Ytterbium metal-insulator-semiconductor contacts to indium phosphide

AU - Reinhardt, K. C.

AU - Singh, A.

AU - Anderson, W. A.

PY - 1988/10

Y1 - 1988/10

N2 - Yb has been shown to form high quality rectifying contacts to p-InP and linear, low resistance contacts to fn-InP. The Yb-rectifying contacts gave a barrier height of 1.03-1.04 eV by C-V, and ideality factor of 1.25 with a 10 Å interfacial oxide and reverse saturation current density of 2-3 × 10-9 A/cm2. As a temperature sensor, the contact gave a sensitivity of 2.4 mV/K with linearity from 100 to 450 K. The low resistance contact to n-InP has a resistance of 0.02 Ω-cm2 on undoped material.

AB - Yb has been shown to form high quality rectifying contacts to p-InP and linear, low resistance contacts to fn-InP. The Yb-rectifying contacts gave a barrier height of 1.03-1.04 eV by C-V, and ideality factor of 1.25 with a 10 Å interfacial oxide and reverse saturation current density of 2-3 × 10-9 A/cm2. As a temperature sensor, the contact gave a sensitivity of 2.4 mV/K with linearity from 100 to 450 K. The low resistance contact to n-InP has a resistance of 0.02 Ω-cm2 on undoped material.

UR - https://www.scopus.com/pages/publications/2942698147

U2 - 10.1016/0038-1101(88)90027-5

DO - 10.1016/0038-1101(88)90027-5

M3 - Article

AN - SCOPUS:2942698147

SN - 0038-1101

VL - 31

SP - 1537

EP - 1539

JO - Solid State Electronics

JF - Solid State Electronics

IS - 10

ER -

Ytterbium metal-insulator-semiconductor contacts to indium phosphide

Abstract

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