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Wetting transition for carbon nanotube arrays under metal contacts

  • IBM

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Structural arrays with nanoscale spacing arise in many device concepts. Carbon nanotube transistors are an extreme example, where a practical technology will require arrays of parallel nanotubes with spacing of order 10 nm or less. We show that with decreasing pitch there is a first-order transition, from a robust structure in which the metal wets the substrate between tubes, to a poorly wetting structure in which the metal rides atop the nanotube array without touching the substrate. The latter is analogous to the superhydrophobic "lotus leaf effect." There is a sharp minimum in the delamination energy of metal contacts at the transition pitch. We discuss implications for contact resistance and possible mitigation strategies.

Original languageEnglish
Article number085501
JournalPhysical Review Letters
Volume114
Issue number8
DOIs
StatePublished - Feb 27 2015

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