Well-oriented silicon thin films with high carrier mobility on poly crystalline substrates

Growth of well-oriented silicon (Si) thin films with high carrier mobility on polycrystalline substrates was investigated. The thin films was grown in metal alloy tapes by incorporating an ion-beam textured MgO buffer layer and epetaxial γ-Al₂O₃ template layer. The ion beam assisted deposition (IBAD) texturing technique were used to produce thin films of high temperature superconductors (HTS) with biaxially oriented grains. It was found that Si layer grew in a (001) orientation perpendicular to the substrate and had an in-plane lattice constant of 0.54 nm.