Voltage Balancing Control with Capacitor Charging Method for Series Connected SiC MOSFET Submodules

Inhwan Lee; Xiu Yao

doi:10.1109/ECCE44975.2020.9235723

Voltage Balancing Control with Capacitor Charging Method for Series Connected SiC MOSFET Submodules

Inhwan Lee
, Xiu Yao

Department of Electrical Engineering

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

Device series connection is a method to achieve higher blocking voltage with multiple devices. However, a voltage unbalance among the series connected devices is a critical issue that may lead to a failure of the devices. The unbalance can be caused by difference of device characteristics and mismatch of gate signals due to delay of external gate drive circuit. In this work, a voltage balancing control (VBC) for series connected SiC MOSFET submodules is studied to solve the unbalance issue. One submodule consists of two switches and one shunt capacitor. By charging or discharging the shunt capacitor, voltage balancing can be achieved. The VBC is experimentally verified with four series connected SiC MOSFET submodules up to 3 kV DC voltage. Voltage balancing is achieved within 5 % of an expected balanced voltage.

Original language	English
Title of host publication	ECCE 2020 - IEEE Energy Conversion Congress and Exposition
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3125-3130
Number of pages	6
ISBN (Electronic)	9781728158266
DOIs	https://doi.org/10.1109/ECCE44975.2020.9235723
State	Published - Oct 11 2020
Event	12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020 - Virtual, Detroit, United States Duration: Oct 11 2020 → Oct 15 2020

Publication series

Name	ECCE 2020 - IEEE Energy Conversion Congress and Exposition

Conference

Conference	12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020
Country/Territory	United States
City	Virtual, Detroit
Period	10/11/20 → 10/15/20

Keywords

Series connection
Silicon carbide (SiC) MOSFET
Voltage balancing control
Wide bandgap (WBG) device

Access to Document

10.1109/ECCE44975.2020.9235723

Cite this

Lee, I., & Yao, X. (2020). Voltage Balancing Control with Capacitor Charging Method for Series Connected SiC MOSFET Submodules. In ECCE 2020 - IEEE Energy Conversion Congress and Exposition (pp. 3125-3130). Article 9235723 (ECCE 2020 - IEEE Energy Conversion Congress and Exposition). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE44975.2020.9235723

@inproceedings{98bd5a16fd32422380c2d8470fab4a7f,

title = "Voltage Balancing Control with Capacitor Charging Method for Series Connected SiC MOSFET Submodules",

abstract = "Device series connection is a method to achieve higher blocking voltage with multiple devices. However, a voltage unbalance among the series connected devices is a critical issue that may lead to a failure of the devices. The unbalance can be caused by difference of device characteristics and mismatch of gate signals due to delay of external gate drive circuit. In this work, a voltage balancing control (VBC) for series connected SiC MOSFET submodules is studied to solve the unbalance issue. One submodule consists of two switches and one shunt capacitor. By charging or discharging the shunt capacitor, voltage balancing can be achieved. The VBC is experimentally verified with four series connected SiC MOSFET submodules up to 3 kV DC voltage. Voltage balancing is achieved within 5 \% of an expected balanced voltage.",

keywords = "Series connection, Silicon carbide (SiC) MOSFET, Voltage balancing control, Wide bandgap (WBG) device",

author = "Inhwan Lee and Xiu Yao",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020 ; Conference date: 11-10-2020 Through 15-10-2020",

year = "2020",

month = oct,

day = "11",

doi = "10.1109/ECCE44975.2020.9235723",

language = "English",

series = "ECCE 2020 - IEEE Energy Conversion Congress and Exposition",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3125--3130",

booktitle = "ECCE 2020 - IEEE Energy Conversion Congress and Exposition",

address = "United States",

}

Lee, I & Yao, X 2020, Voltage Balancing Control with Capacitor Charging Method for Series Connected SiC MOSFET Submodules. in ECCE 2020 - IEEE Energy Conversion Congress and Exposition., 9235723, ECCE 2020 - IEEE Energy Conversion Congress and Exposition, Institute of Electrical and Electronics Engineers Inc., pp. 3125-3130, 12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020, Virtual, Detroit, United States, 10/11/20. https://doi.org/10.1109/ECCE44975.2020.9235723

Voltage Balancing Control with Capacitor Charging Method for Series Connected SiC MOSFET Submodules. / Lee, Inhwan; Yao, Xiu.
ECCE 2020 - IEEE Energy Conversion Congress and Exposition. Institute of Electrical and Electronics Engineers Inc., 2020. p. 3125-3130 9235723 (ECCE 2020 - IEEE Energy Conversion Congress and Exposition).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Voltage Balancing Control with Capacitor Charging Method for Series Connected SiC MOSFET Submodules

AU - Lee, Inhwan

AU - Yao, Xiu

PY - 2020/10/11

Y1 - 2020/10/11

N2 - Device series connection is a method to achieve higher blocking voltage with multiple devices. However, a voltage unbalance among the series connected devices is a critical issue that may lead to a failure of the devices. The unbalance can be caused by difference of device characteristics and mismatch of gate signals due to delay of external gate drive circuit. In this work, a voltage balancing control (VBC) for series connected SiC MOSFET submodules is studied to solve the unbalance issue. One submodule consists of two switches and one shunt capacitor. By charging or discharging the shunt capacitor, voltage balancing can be achieved. The VBC is experimentally verified with four series connected SiC MOSFET submodules up to 3 kV DC voltage. Voltage balancing is achieved within 5 % of an expected balanced voltage.

AB - Device series connection is a method to achieve higher blocking voltage with multiple devices. However, a voltage unbalance among the series connected devices is a critical issue that may lead to a failure of the devices. The unbalance can be caused by difference of device characteristics and mismatch of gate signals due to delay of external gate drive circuit. In this work, a voltage balancing control (VBC) for series connected SiC MOSFET submodules is studied to solve the unbalance issue. One submodule consists of two switches and one shunt capacitor. By charging or discharging the shunt capacitor, voltage balancing can be achieved. The VBC is experimentally verified with four series connected SiC MOSFET submodules up to 3 kV DC voltage. Voltage balancing is achieved within 5 % of an expected balanced voltage.

KW - Series connection

KW - Silicon carbide (SiC) MOSFET

KW - Voltage balancing control

KW - Wide bandgap (WBG) device

UR - https://www.scopus.com/pages/publications/85097159824

U2 - 10.1109/ECCE44975.2020.9235723

DO - 10.1109/ECCE44975.2020.9235723

M3 - Conference contribution

AN - SCOPUS:85097159824

T3 - ECCE 2020 - IEEE Energy Conversion Congress and Exposition

SP - 3125

EP - 3130

BT - ECCE 2020 - IEEE Energy Conversion Congress and Exposition

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020

Y2 - 11 October 2020 through 15 October 2020

ER -

Voltage Balancing Control with Capacitor Charging Method for Series Connected SiC MOSFET Submodules

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this