Voltage Balancing Control with Active Gate Driver for Series Connected SiC MOSFETs

Inhwan Lee; Lu Yue; Xiu Yao

doi:10.1109/ECCE.2019.8912562

Voltage Balancing Control with Active Gate Driver for Series Connected SiC MOSFETs

Inhwan Lee
, Lu Yue
, Xiu Yao

Department of Electrical Engineering

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

Silicon carbide (SiC) device is expected to replace silicon (Si) device in many high voltage and power application due to potentially higher switching frequency and voltage capabilities. Even though its potential voltage capability, the highest voltage rating of a single commercial SiC MOSFET is 1.7 kV. An alternative method to achieve higher voltage is a device series connection. However, it causes a voltage unbalance issue during turn-off state that can harm the devices. Therefore, the voltage balancing control (VBC) must be considered in device series connection. In this paper, a VBC method with active gate driver (AGD) is proposed. A gate resistance modulation method with a signal time delay is adopted for dynamic voltage sharing. The proposed method is experimentally verified.

Original language	English
Title of host publication	2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3235-3239
Number of pages	5
ISBN (Electronic)	9781728103952
DOIs	https://doi.org/10.1109/ECCE.2019.8912562
State	Published - Sep 2019
Event	11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019 - Baltimore, United States Duration: Sep 29 2019 → Oct 3 2019

Publication series

Name	2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019

Conference

Conference	11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019
Country/Territory	United States
City	Baltimore
Period	09/29/19 → 10/3/19

Keywords

Active gate driver
Series connection
Silicon carbide (SiC) MOSFET
Voltage balancing control
Wide bandgap (WBG) device

Access to Document

10.1109/ECCE.2019.8912562

Cite this

Lee, I., Yue, L., & Yao, X. (2019). Voltage Balancing Control with Active Gate Driver for Series Connected SiC MOSFETs. In 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019 (pp. 3235-3239). Article 8912562 (2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ECCE.2019.8912562

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title = "Voltage Balancing Control with Active Gate Driver for Series Connected SiC MOSFETs",

abstract = "Silicon carbide (SiC) device is expected to replace silicon (Si) device in many high voltage and power application due to potentially higher switching frequency and voltage capabilities. Even though its potential voltage capability, the highest voltage rating of a single commercial SiC MOSFET is 1.7 kV. An alternative method to achieve higher voltage is a device series connection. However, it causes a voltage unbalance issue during turn-off state that can harm the devices. Therefore, the voltage balancing control (VBC) must be considered in device series connection. In this paper, a VBC method with active gate driver (AGD) is proposed. A gate resistance modulation method with a signal time delay is adopted for dynamic voltage sharing. The proposed method is experimentally verified.",

keywords = "Active gate driver, Series connection, Silicon carbide (SiC) MOSFET, Voltage balancing control, Wide bandgap (WBG) device",

author = "Inhwan Lee and Lu Yue and Xiu Yao",

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year = "2019",

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language = "English",

series = "2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019",

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Lee, I, Yue, L & Yao, X 2019, Voltage Balancing Control with Active Gate Driver for Series Connected SiC MOSFETs. in 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019., 8912562, 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019, Institute of Electrical and Electronics Engineers Inc., pp. 3235-3239, 11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019, Baltimore, United States, 09/29/19. https://doi.org/10.1109/ECCE.2019.8912562

Voltage Balancing Control with Active Gate Driver for Series Connected SiC MOSFETs. / Lee, Inhwan; Yue, Lu; Yao, Xiu.
2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 3235-3239 8912562 (2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Voltage Balancing Control with Active Gate Driver for Series Connected SiC MOSFETs

AU - Lee, Inhwan

AU - Yue, Lu

AU - Yao, Xiu

PY - 2019/9

Y1 - 2019/9

N2 - Silicon carbide (SiC) device is expected to replace silicon (Si) device in many high voltage and power application due to potentially higher switching frequency and voltage capabilities. Even though its potential voltage capability, the highest voltage rating of a single commercial SiC MOSFET is 1.7 kV. An alternative method to achieve higher voltage is a device series connection. However, it causes a voltage unbalance issue during turn-off state that can harm the devices. Therefore, the voltage balancing control (VBC) must be considered in device series connection. In this paper, a VBC method with active gate driver (AGD) is proposed. A gate resistance modulation method with a signal time delay is adopted for dynamic voltage sharing. The proposed method is experimentally verified.

AB - Silicon carbide (SiC) device is expected to replace silicon (Si) device in many high voltage and power application due to potentially higher switching frequency and voltage capabilities. Even though its potential voltage capability, the highest voltage rating of a single commercial SiC MOSFET is 1.7 kV. An alternative method to achieve higher voltage is a device series connection. However, it causes a voltage unbalance issue during turn-off state that can harm the devices. Therefore, the voltage balancing control (VBC) must be considered in device series connection. In this paper, a VBC method with active gate driver (AGD) is proposed. A gate resistance modulation method with a signal time delay is adopted for dynamic voltage sharing. The proposed method is experimentally verified.

KW - Active gate driver

KW - Series connection

KW - Silicon carbide (SiC) MOSFET

KW - Voltage balancing control

KW - Wide bandgap (WBG) device

UR - https://www.scopus.com/pages/publications/85076792460

U2 - 10.1109/ECCE.2019.8912562

DO - 10.1109/ECCE.2019.8912562

M3 - Conference contribution

AN - SCOPUS:85076792460

T3 - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019

SP - 3235

EP - 3239

BT - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019

Y2 - 29 September 2019 through 3 October 2019

ER -

Voltage Balancing Control with Active Gate Driver for Series Connected SiC MOSFETs

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Keywords

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