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Verilog-A compact model of a ME-MTJ based XNOR/NOR gate

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Abstract

We present the first Verilog-A based models of a magneto-electric magnetic tunnel junction (ME-MTJ) based XNOR and NOR logic gates. The ME-MTJ is a low-power beyond-CMOS technology, with possible applications in memory and logic devices. The models presented here have been developed in Verilog-A and validated with simulations using cadence spectre. We show the operation of this ME-MTJ dual-purpose logic gate illustrating integrated memory capabilities. A full adder based on the XNOR gate is also validated.

Original languageEnglish
Title of host publicationProceedings of the IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages162-167
Number of pages6
ISBN (Electronic)9781509060368
DOIs
StatePublished - Sep 28 2017
Event2017 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2017 - Newport, United States
Duration: Jul 25 2017Jul 26 2017

Publication series

NameProceedings of the IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2017

Conference

Conference2017 IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2017
Country/TerritoryUnited States
CityNewport
Period07/25/1707/26/17

Keywords

  • Adder
  • logic
  • Magnetic Tunnel Junction (MTJ)
  • Magneto-Electric Magnetic Tunnel Junction (ME-MTJ)
  • Memory
  • NOR
  • Spintronics
  • Verilog-A
  • XNOR

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