Vapor phase synthesis of II-IV semiconductor nanoparticles in a counterflow jet reactor

D. Sarigiannis; J. D. Peck; T. J. Mountziaris; G. Kioseoglou; A. Petrou

doi:10.1557/PROC-616-41

Vapor phase synthesis of II-IV semiconductor nanoparticles in a counterflow jet reactor

D. Sarigiannis
, J. D. Peck
, T. J. Mountziaris
, G. Kioseoglou
, A. Petrou

Physics

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The vapor-phase synthesis of polycrystalline ZnSe nanoparticles is reported. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and were collected by impact on a Si water. The precursors used in this study were vapors of (CH₃)₂Zn:[N(C₂ H₅)₃]₃ and H₂Se gas diluted in hydrogen. These precursors have been used in the past for Metalorganic Vapor Phase Epitaxy (MOVPE) of ZnSe thin films. The particles were characterized by Transmission Electron Microscopy (TEM), electron diffraction, and Raman spectroscopy. The reactor was operated in a continuous, steady-state mode using a gas deliver system that is typical for MOVPE systems.

Original language	English
Pages (from-to)	41-46
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	616
DOIs	https://doi.org/10.1557/PROC-616-41
State	Published - 2000

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title = "Vapor phase synthesis of II-IV semiconductor nanoparticles in a counterflow jet reactor",

abstract = "The vapor-phase synthesis of polycrystalline ZnSe nanoparticles is reported. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and were collected by impact on a Si water. The precursors used in this study were vapors of (CH3)2Zn:[N(C2 H5)3]3 and H2Se gas diluted in hydrogen. These precursors have been used in the past for Metalorganic Vapor Phase Epitaxy (MOVPE) of ZnSe thin films. The particles were characterized by Transmission Electron Microscopy (TEM), electron diffraction, and Raman spectroscopy. The reactor was operated in a continuous, steady-state mode using a gas deliver system that is typical for MOVPE systems.",

author = "D. Sarigiannis and Peck, \{J. D.\} and Mountziaris, \{T. J.\} and G. Kioseoglou and A. Petrou",

year = "2000",

doi = "10.1557/PROC-616-41",

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pages = "41--46",

journal = "Materials Research Society Symposium - Proceedings",

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T1 - Vapor phase synthesis of II-IV semiconductor nanoparticles in a counterflow jet reactor

AU - Sarigiannis, D.

AU - Peck, J. D.

AU - Mountziaris, T. J.

AU - Kioseoglou, G.

AU - Petrou, A.

PY - 2000

Y1 - 2000

N2 - The vapor-phase synthesis of polycrystalline ZnSe nanoparticles is reported. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and were collected by impact on a Si water. The precursors used in this study were vapors of (CH3)2Zn:[N(C2 H5)3]3 and H2Se gas diluted in hydrogen. These precursors have been used in the past for Metalorganic Vapor Phase Epitaxy (MOVPE) of ZnSe thin films. The particles were characterized by Transmission Electron Microscopy (TEM), electron diffraction, and Raman spectroscopy. The reactor was operated in a continuous, steady-state mode using a gas deliver system that is typical for MOVPE systems.

AB - The vapor-phase synthesis of polycrystalline ZnSe nanoparticles is reported. The particles were grown at room temperature and at a pressure of 125 torr in a counterflow jet reactor and were collected by impact on a Si water. The precursors used in this study were vapors of (CH3)2Zn:[N(C2 H5)3]3 and H2Se gas diluted in hydrogen. These precursors have been used in the past for Metalorganic Vapor Phase Epitaxy (MOVPE) of ZnSe thin films. The particles were characterized by Transmission Electron Microscopy (TEM), electron diffraction, and Raman spectroscopy. The reactor was operated in a continuous, steady-state mode using a gas deliver system that is typical for MOVPE systems.

UR - https://www.scopus.com/pages/publications/0034446910

U2 - 10.1557/PROC-616-41

DO - 10.1557/PROC-616-41

M3 - Article

AN - SCOPUS:0034446910

SN - 0272-9172

VL - 616

SP - 41

EP - 46

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Vapor phase synthesis of II-IV semiconductor nanoparticles in a counterflow jet reactor

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