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Valley Transfer and Hot Carrier Extraction in GaAs/Al0.16Ga0.84As Heterojunction Solar Cells

  • Hasan Ahmed
  • , Chiran Wijesundara
  • , Vincent R. Whiteside
  • , David K. Ferry
  • , Tim Thomay
  • , Stephen J. Polly
  • , Seth M. Hubbard
  • , Ian R. Sellers
  • SUNY Buffalo
  • Arizona State University
  • Rochester Institute of Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Here, evidence for field-aided and photogenerated carrier scattering between the Γ and L valley coupled with L-valley transfer at the absorber/barrier heterointerface in a GaAs/Al0.16Ga0.84As p-i-n diode is presented. A combination of time-resolved and CW photoluminescence is used to probe hot carrier transfer via emission from the high energy Al0.16Ga0.84As barrier after excitation in the GaAs absorber. These data demonstrate transfer of hot carriers between the satellite valleys of the constituent materials in this architecture. The achievement of L valley transfer is an important step towards the realization of a valley photovoltaic device.

Original languageEnglish
Title of host publication2025 IEEE 53rd Photovoltaic Specialists Conference, PVSC 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages349-351
Number of pages3
ISBN (Electronic)9798331534448
DOIs
StatePublished - 2025
Event53rd IEEE Photovoltaic Specialists Conference, PVSC 2025 - Montreal, Canada
Duration: Jun 8 2025Jun 13 2025

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference53rd IEEE Photovoltaic Specialists Conference, PVSC 2025
Country/TerritoryCanada
CityMontreal
Period06/8/2506/13/25

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