@inproceedings{fe1f21868efc4f6ca0e1dfa176ac28fe,
title = "Unity quantum efficiency photodiode using porous silicon film",
abstract = "A highly sensitive photodiode was fabricated with a metal-porous silicon junction. The spectral response was measured for the wavelength range from 400 nm to 1.075 μm. It was demonstrated that close to unity quantum efficiency could be obtained in the wavelength range of 630 to 900 nm without any anti-reflective coating. The detector response time is about 2 ns for a 9 volts reverse bias. The acceptance angle of photodiode is 2 times better than that of conventional Si detectors. The uniformity and stability were also studied. Possible mechanisms are discussed.",
author = "Zheng, \{J. P.\} and Jiao, \{K. L.\} and Shen, \{W. P.\} and Anderson, \{W. A.\} and Kwok, \{H. S.\}",
year = "1993",
language = "English",
isbn = "1558991786",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "371--375",
booktitle = "Materials Research Society Symposium Proceedings",
note = "Proceedings of the Second Symposium on Dynamics in Small Confining Systems ; Conference date: 30-11-1992 Through 04-12-1992",
}