Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

Ashish K. Baraskar; Mark A. Wistey; Vibhor Jain; Uttam Singisetti; Greg Burek; Brian J. Thibeault; Yong Ju Lee; Arthur C. Gossard; Mark J.W. Rodwell

doi:10.1116/1.3182737

Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

Ashish K. Baraskar
, Mark A. Wistey
, Vibhor Jain
, Uttam Singisetti
, Greg Burek
, Brian J. Thibeault
, Yong Ju Lee
, Arthur C. Gossard
, Mark J.W. Rodwell

Department of Electrical Engineering

University of California at Santa Barbara
Intel

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

The authors report ultralow specific contact resistivity (ρ _c) in nonalloyed, in situ Ohmic contacts to heavily doped n -type In_0.53 Ga_0.47 As:Si layers with 6× 10¹⁹ cm-3 active carrier concentration, lattice matched to InP. The contacts were formed by depositing molybdenum (Mo) immediately after the In_0.53 Ga_0.47 As growth without breaking vacuum. Transmission line model measurements showed a contact resistivity of (1.1±0.6) × 10 ^-8 cm² for the Mo/InGaAs interface. The contacts show no observable degradation in resistivity after annealing at 300 and 400 °C for 1 min duration.

Original language	English
Pages (from-to)	2036-2039
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	4
DOIs	https://doi.org/10.1116/1.3182737
State	Published - 2009

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@article{c67dba4410104f9fbc7344067d93d21c,

title = "Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs",

abstract = "The authors report ultralow specific contact resistivity (ρ c) in nonalloyed, in situ Ohmic contacts to heavily doped n -type In0.53 Ga0.47 As:Si layers with 6× 1019 cm-3 active carrier concentration, lattice matched to InP. The contacts were formed by depositing molybdenum (Mo) immediately after the In0.53 Ga0.47 As growth without breaking vacuum. Transmission line model measurements showed a contact resistivity of (1.1±0.6) × 10 -8 cm2 for the Mo/InGaAs interface. The contacts show no observable degradation in resistivity after annealing at 300 and 400 °C for 1 min duration.",

author = "Baraskar, \{Ashish K.\} and Wistey, \{Mark A.\} and Vibhor Jain and Uttam Singisetti and Greg Burek and Thibeault, \{Brian J.\} and Lee, \{Yong Ju\} and Gossard, \{Arthur C.\} and Rodwell, \{Mark J.W.\}",

year = "2009",

doi = "10.1116/1.3182737",

language = "English",

volume = "27",

pages = "2036--2039",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

AU - Baraskar, Ashish K.

AU - Wistey, Mark A.

AU - Jain, Vibhor

AU - Singisetti, Uttam

AU - Burek, Greg

AU - Thibeault, Brian J.

AU - Lee, Yong Ju

AU - Gossard, Arthur C.

AU - Rodwell, Mark J.W.

PY - 2009

Y1 - 2009

N2 - The authors report ultralow specific contact resistivity (ρ c) in nonalloyed, in situ Ohmic contacts to heavily doped n -type In0.53 Ga0.47 As:Si layers with 6× 1019 cm-3 active carrier concentration, lattice matched to InP. The contacts were formed by depositing molybdenum (Mo) immediately after the In0.53 Ga0.47 As growth without breaking vacuum. Transmission line model measurements showed a contact resistivity of (1.1±0.6) × 10 -8 cm2 for the Mo/InGaAs interface. The contacts show no observable degradation in resistivity after annealing at 300 and 400 °C for 1 min duration.

AB - The authors report ultralow specific contact resistivity (ρ c) in nonalloyed, in situ Ohmic contacts to heavily doped n -type In0.53 Ga0.47 As:Si layers with 6× 1019 cm-3 active carrier concentration, lattice matched to InP. The contacts were formed by depositing molybdenum (Mo) immediately after the In0.53 Ga0.47 As growth without breaking vacuum. Transmission line model measurements showed a contact resistivity of (1.1±0.6) × 10 -8 cm2 for the Mo/InGaAs interface. The contacts show no observable degradation in resistivity after annealing at 300 and 400 °C for 1 min duration.

UR - https://www.scopus.com/pages/publications/68349127560

U2 - 10.1116/1.3182737

DO - 10.1116/1.3182737

M3 - Article

AN - SCOPUS:68349127560

SN - 1071-1023

VL - 27

SP - 2036

EP - 2039

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs

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