Ultrafast carrier dynamics in modified semiconductor-doped glass

J. P. Zheng; H. S. Kwok

doi:10.1063/1.100824

Ultrafast carrier dynamics in modified semiconductor-doped glass

J. P. Zheng
, H. S. Kwok

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The recombination lifetime in CdS_x Se_1-x semiconductor-doped glass was measured by time-resolved photoluminescence. It was found that long-term exposure of the glass to high-intensity laser pulses produced a permanent reduction of the free-carrier lifetime from 80 ps to less than 10 ps. This change could be reversed by thermal annealing and should have applications to ultrafast optical signal processing.

Original language	English
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	54
Issue number	1
DOIs	https://doi.org/10.1063/1.100824
State	Published - 1989

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10.1063/1.100824

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title = "Ultrafast carrier dynamics in modified semiconductor-doped glass",

abstract = "The recombination lifetime in CdSx Se1-x semiconductor-doped glass was measured by time-resolved photoluminescence. It was found that long-term exposure of the glass to high-intensity laser pulses produced a permanent reduction of the free-carrier lifetime from 80 ps to less than 10 ps. This change could be reversed by thermal annealing and should have applications to ultrafast optical signal processing.",

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year = "1989",

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AU - Kwok, H. S.

PY - 1989

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N2 - The recombination lifetime in CdSx Se1-x semiconductor-doped glass was measured by time-resolved photoluminescence. It was found that long-term exposure of the glass to high-intensity laser pulses produced a permanent reduction of the free-carrier lifetime from 80 ps to less than 10 ps. This change could be reversed by thermal annealing and should have applications to ultrafast optical signal processing.

AB - The recombination lifetime in CdSx Se1-x semiconductor-doped glass was measured by time-resolved photoluminescence. It was found that long-term exposure of the glass to high-intensity laser pulses produced a permanent reduction of the free-carrier lifetime from 80 ps to less than 10 ps. This change could be reversed by thermal annealing and should have applications to ultrafast optical signal processing.

UR - https://www.scopus.com/pages/publications/30244524929

U2 - 10.1063/1.100824

DO - 10.1063/1.100824

M3 - Article

AN - SCOPUS:30244524929

SN - 0003-6951

VL - 54

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Ultrafast carrier dynamics in modified semiconductor-doped glass

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