Type-I and Type-II interband transitions in CdSe/ZnTe quantum well structures

J. Haetty; E. H. Lee; H. Luo; A. Petrou; J. Warnock

doi:10.1016/S0038-1098(98)00349-4

Type-I and Type-II interband transitions in CdSe/ZnTe quantum well structures

J. Haetty
, E. H. Lee
, H. Luo
, A. Petrou
, J. Warnock

Physics

SUNY Buffalo
IBM

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

We have studied the luminescence intensity associated with type-I and type-II interband transitions in several CdSe/ZnTe quantum well structures as a function of CdSe layer thickness. It was found that as the CdSe layers become wider, the intensity of the type-I transition increases, while that of the type-II transition decreases. These results are analyzed in terms of a variational calculation which takes into account the Coulomb interaction between the electrons and holes that participate in the interband transitions.

Original language	English
Pages (from-to)	205-209
Number of pages	5
Journal	Solid State Communications
Volume	108
Issue number	4
DOIs	https://doi.org/10.1016/S0038-1098(98)00349-4
State	Published - Sep 9 1998

Keywords

A. quantum wells
A. semiconductors
D. optical properties
D. recombination and trapping
E. luminescence

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10.1016/S0038-1098(98)00349-4

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title = "Type-I and Type-II interband transitions in CdSe/ZnTe quantum well structures",

abstract = "We have studied the luminescence intensity associated with type-I and type-II interband transitions in several CdSe/ZnTe quantum well structures as a function of CdSe layer thickness. It was found that as the CdSe layers become wider, the intensity of the type-I transition increases, while that of the type-II transition decreases. These results are analyzed in terms of a variational calculation which takes into account the Coulomb interaction between the electrons and holes that participate in the interband transitions.",

keywords = "A. quantum wells, A. semiconductors, D. optical properties, D. recombination and trapping, E. luminescence",

author = "J. Haetty and Lee, \{E. H.\} and H. Luo and A. Petrou and J. Warnock",

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T1 - Type-I and Type-II interband transitions in CdSe/ZnTe quantum well structures

AU - Haetty, J.

AU - Lee, E. H.

AU - Luo, H.

AU - Petrou, A.

AU - Warnock, J.

PY - 1998/9/9

Y1 - 1998/9/9

N2 - We have studied the luminescence intensity associated with type-I and type-II interband transitions in several CdSe/ZnTe quantum well structures as a function of CdSe layer thickness. It was found that as the CdSe layers become wider, the intensity of the type-I transition increases, while that of the type-II transition decreases. These results are analyzed in terms of a variational calculation which takes into account the Coulomb interaction between the electrons and holes that participate in the interband transitions.

AB - We have studied the luminescence intensity associated with type-I and type-II interband transitions in several CdSe/ZnTe quantum well structures as a function of CdSe layer thickness. It was found that as the CdSe layers become wider, the intensity of the type-I transition increases, while that of the type-II transition decreases. These results are analyzed in terms of a variational calculation which takes into account the Coulomb interaction between the electrons and holes that participate in the interband transitions.

KW - A. quantum wells

KW - A. semiconductors

KW - D. optical properties

KW - D. recombination and trapping

KW - E. luminescence

UR - https://www.scopus.com/pages/publications/0032500275

U2 - 10.1016/S0038-1098(98)00349-4

DO - 10.1016/S0038-1098(98)00349-4

M3 - Article

AN - SCOPUS:0032500275

SN - 0038-1098

VL - 108

SP - 205

EP - 209

JO - Solid State Communications

JF - Solid State Communications

IS - 4

ER -

Type-I and Type-II interband transitions in CdSe/ZnTe quantum well structures

Abstract

Keywords

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