Skip to main navigation Skip to search Skip to main content

Two-spin dephasing by electron-phonon interaction in semiconductor double quantum dots

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

We study electron-phonon interaction induced decoherence between two-electron singlet and triplet states in a semiconductor double quantum dot using a spin-boson model. We investigate the onset and time evolution of this dephasing, and study its dependence on quantum dot parameters such as dot size and double dot separations, as well as the host materials (GaAs and Si). At the short time limit, electron-phonon interaction only causes an incomplete initial Gaussian decay of the off-diagonal density matrix element in the singlet-triplet Hilbert space; a complete long-time exponential decay due to phonon relaxation would eventually dominate over two-spin decoherence. We analyze two-spin decoherence in both symmetric and biased double quantum dots, identifying their difference in electron-phonon coupling and the relevant consequences.

Original languageEnglish
Article number165322
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number16
DOIs
StatePublished - Apr 29 2011

Fingerprint

Dive into the research topics of 'Two-spin dephasing by electron-phonon interaction in semiconductor double quantum dots'. Together they form a unique fingerprint.

Cite this