TWO-DIMENSIONAL ELECTRON GAS AT A Ga//0//. //4//7In//0//. //5//3As-InP HETEROJUNCTION INTERFACE.

Youdou Zheng Youdou; Shanxiang Huang Shanxiang; Y. H. Chang; J. P. Cheng; B. D. McCombe

TWO-DIMENSIONAL ELECTRON GAS AT A Ga//0//. //4//7In//0//. //5//3As-InP HETEROJUNCTION INTERFACE.

Youdou Zheng Youdou
, Shanxiang Huang Shanxiang
, Y. H. Chang
, J. P. Cheng
, B. D. McCombe

Physics

Nanjing University

Research output: Contribution to journal › Article › peer-review

Abstract

An electrical transport study of Ga//0//. //4//7In//0//. //5//3As-InP heterojunction grown by chloride vapor phase epitaxy is reported. Shubnikov-de Haas Oscillation, Van de Pauw Hall and cyclotron resonance measurements demonstrate the existence of high-mobility, two-dimensional electron gas at the heterojunction interface at 4. 2 K. Two-dimensional electron concentration is equal to 1. 7 multiplied by 10**1**1 cm** minus **2, and the electron mobility is equal to 3. 3 multiplied by 10**4cm**2/v. s. The cyclotron resonance is observed, giving electron effective mass m//c* equals 0. 046m//0.

Original language	English
Pages (from-to)	531-535
Number of pages	5
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	8
Issue number	5
State	Published - Sep 1987

Cite this

@article{0ac895fcf969428d9797c66c9e7b3333,

title = "TWO-DIMENSIONAL ELECTRON GAS AT A Ga//0//. //4//7In//0//. //5//3As-InP HETEROJUNCTION INTERFACE.",

abstract = "An electrical transport study of Ga//0//. //4//7In//0//. //5//3As-InP heterojunction grown by chloride vapor phase epitaxy is reported. Shubnikov-de Haas Oscillation, Van de Pauw Hall and cyclotron resonance measurements demonstrate the existence of high-mobility, two-dimensional electron gas at the heterojunction interface at 4. 2 K. Two-dimensional electron concentration is equal to 1. 7 multiplied by 10**1**1 cm** minus **2, and the electron mobility is equal to 3. 3 multiplied by 10**4cm**2/v. s. The cyclotron resonance is observed, giving electron effective mass m//c* equals 0. 046m//0.",

author = "\{Zheng Youdou\}, Youdou and \{Huang Shanxiang\}, Shanxiang and Chang, \{Y. H.\} and Cheng, \{J. P.\} and McCombe, \{B. D.\}",

year = "1987",

month = sep,

language = "English",

volume = "8",

pages = "531--535",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "5",

}

TY - JOUR

T1 - TWO-DIMENSIONAL ELECTRON GAS AT A Ga//0//. //4//7In//0//. //5//3As-InP HETEROJUNCTION INTERFACE.

AU - Zheng Youdou, Youdou

AU - Huang Shanxiang, Shanxiang

AU - Chang, Y. H.

AU - Cheng, J. P.

AU - McCombe, B. D.

PY - 1987/9

Y1 - 1987/9

N2 - An electrical transport study of Ga//0//. //4//7In//0//. //5//3As-InP heterojunction grown by chloride vapor phase epitaxy is reported. Shubnikov-de Haas Oscillation, Van de Pauw Hall and cyclotron resonance measurements demonstrate the existence of high-mobility, two-dimensional electron gas at the heterojunction interface at 4. 2 K. Two-dimensional electron concentration is equal to 1. 7 multiplied by 10**1**1 cm** minus **2, and the electron mobility is equal to 3. 3 multiplied by 10**4cm**2/v. s. The cyclotron resonance is observed, giving electron effective mass m//c* equals 0. 046m//0.

AB - An electrical transport study of Ga//0//. //4//7In//0//. //5//3As-InP heterojunction grown by chloride vapor phase epitaxy is reported. Shubnikov-de Haas Oscillation, Van de Pauw Hall and cyclotron resonance measurements demonstrate the existence of high-mobility, two-dimensional electron gas at the heterojunction interface at 4. 2 K. Two-dimensional electron concentration is equal to 1. 7 multiplied by 10**1**1 cm** minus **2, and the electron mobility is equal to 3. 3 multiplied by 10**4cm**2/v. s. The cyclotron resonance is observed, giving electron effective mass m//c* equals 0. 046m//0.

UR - https://www.scopus.com/pages/publications/0023422801

M3 - Article

AN - SCOPUS:0023422801

SN - 0253-4177

VL - 8

SP - 531

EP - 535

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 5

ER -

TWO-DIMENSIONAL ELECTRON GAS AT A Ga//0//. //4//7In//0//. //5//3As-InP HETEROJUNCTION INTERFACE.

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