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Twin boundaries in C54-TiSi2

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Abstract

A large-grained microstructure of C54-TiSi2 has been produced by rapid thermal annealing of Ti/Si thin film couples. Unlike the metastable C49-TiSi2 phase, which is heavily faulted, the C54-TiSi2 is relatively fault-free. We have, however, observed for the first time the presence of twins in C54-TiSi2. The presence of twinning is explained by an atomic model for polytypism in this structure. The faceting of twin boundaries and the dissociation of grain boundaries have also been observed for the first time in C54-TiSi2. It is proposed that the latter observations are related to boundary migration.

Original languageEnglish
Pages (from-to)2317-2322
Number of pages6
JournalMetallurgical Transactions A
Volume21
Issue number9
DOIs
StatePublished - Sep 1990

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