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Tunnelling effects and electron transport in quantum dot structures

  • L. Pichl
  • , J. Horáček
  • , V. Mitin
  • , V. Ryzhii
  • The University of Aizu
  • Charles University

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Using an analytical model of electron confinement in quantum dots, we have calculated the tunnelling rates for electron quasi-bound states. Schrödinger equation for the disk-shaped system in consideration is readily solved both in the time-dependent and time-independent versions, and the quantitative importance of tunnelling phenomena in low temperature electron emission from quantum dots is revealed. Results of the quantum mechanical analysis are transferred into the device characteristics of common multi-layer quantum dot hetero-structures.

Original languageEnglish
Pages (from-to)83-84
Number of pages2
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume18
Issue number1-3
DOIs
StatePublished - May 2003
Event23rd International Conference on Low Temperature Physics - Hiroshima, Japan
Duration: Aug 20 2002Aug 27 2002

Keywords

  • Axial symmetry
  • QD energy levels
  • Quantum dot
  • Tunnelling rate
  • Wave packet dynamics

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