TY - GEN
T1 - Tunable dielectric properties of lead strontium titanate thin films by sol-gel technique
AU - Jain, M.
AU - Karan, N. K.
AU - Yoon, J.
AU - Wang, H.
AU - Katiyar, R. S.
AU - Jia, Q. X.
PY - 2008
Y1 - 2008
N2 - For the applications in tunable microwave devices, thin films of a potential candidate material, PbxSr1-xTiO3 (with x=0.3), were studied. To study dielectric proeprties in coplanar and metal-insulatormetal configuration, the PbxSr1-xTiO 3 films were deposited on single crystalline LaAlO3 and conductive LaNiO3 coated LaAlO3 substrates using sol-gel technique. The film on LaAlO3 was highly c-axis oriented and epitaxial. At room temperature, dielectric tunability values as high as 18% (at 20kV/cm) and 70% (at 225kV/cm) were achieved for the Pb0.3Sr 0.7TiO3 film on LaAlO3 and LaNiO 3/LaAlO3, respectively.
AB - For the applications in tunable microwave devices, thin films of a potential candidate material, PbxSr1-xTiO3 (with x=0.3), were studied. To study dielectric proeprties in coplanar and metal-insulatormetal configuration, the PbxSr1-xTiO 3 films were deposited on single crystalline LaAlO3 and conductive LaNiO3 coated LaAlO3 substrates using sol-gel technique. The film on LaAlO3 was highly c-axis oriented and epitaxial. At room temperature, dielectric tunability values as high as 18% (at 20kV/cm) and 70% (at 225kV/cm) were achieved for the Pb0.3Sr 0.7TiO3 film on LaAlO3 and LaNiO 3/LaAlO3, respectively.
UR - https://www.scopus.com/pages/publications/58149501644
U2 - 10.1109/ISAF.2008.4693842
DO - 10.1109/ISAF.2008.4693842
M3 - Conference contribution
AN - SCOPUS:58149501644
SN - 1424427444
SN - 9781424427444
T3 - IEEE International Symposium on Applications of Ferroelectrics
BT - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
T2 - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Y2 - 23 February 2008 through 28 February 2008
ER -