Transport in split gate MOS quantum dot structures

S. M. Goodnick; J. Bird; D. K. Ferry; A. D. Gunther; M. D. Khoury; M. Kozicki; M. J. Rack; T. J. Thornton; D. Vasileska-Kafedezka

Transport in split gate MOS quantum dot structures

S. M. Goodnick
, J. Bird
, D. K. Ferry
, A. D. Gunther
, M. D. Khoury
, M. Kozicki
, M. J. Rack
, T. J. Thornton
, D. Vasileska-Kafedezka

Department of Electrical Engineering

Arizona State University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy level within the dot as well as the interaction of the electrons with one another.

Original language	English
Title of host publication	Proceedings of the IEEE Great Lakes Symposium on VLSI
Publisher	IEEE
Pages	394-396
Number of pages	3
ISBN (Print)	0769501044
State	Published - 1999
Event	Proceedings of the 1999 9th Great Lakes Symposium on VLSI (GLSVLSI '99) - Ann Arbor, MI, USA Duration: Mar 4 1999 → Mar 6 1999

Publication series

Name	Proceedings of the IEEE Great Lakes Symposium on VLSI
ISSN (Print)	1066-1395

Conference

Conference	Proceedings of the 1999 9th Great Lakes Symposium on VLSI (GLSVLSI '99)
City	Ann Arbor, MI, USA
Period	03/4/99 → 03/6/99

Cite this

@inproceedings{af73345b34c1422588efcd95fac1d200,

title = "Transport in split gate MOS quantum dot structures",

abstract = "A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy level within the dot as well as the interaction of the electrons with one another.",

author = "Goodnick, \{S. M.\} and J. Bird and Ferry, \{D. K.\} and Gunther, \{A. D.\} and Khoury, \{M. D.\} and M. Kozicki and Rack, \{M. J.\} and Thornton, \{T. J.\} and D. Vasileska-Kafedezka",

year = "1999",

language = "English",

isbn = "0769501044",

series = "Proceedings of the IEEE Great Lakes Symposium on VLSI",

publisher = "IEEE",

pages = "394--396",

booktitle = "Proceedings of the IEEE Great Lakes Symposium on VLSI",

note = "Proceedings of the 1999 9th Great Lakes Symposium on VLSI (GLSVLSI '99) ; Conference date: 04-03-1999 Through 06-03-1999",

}

Goodnick, SM, Bird, J, Ferry, DK, Gunther, AD, Khoury, MD, Kozicki, M, Rack, MJ, Thornton, TJ & Vasileska-Kafedezka, D 1999, Transport in split gate MOS quantum dot structures. in Proceedings of the IEEE Great Lakes Symposium on VLSI. Proceedings of the IEEE Great Lakes Symposium on VLSI, IEEE, pp. 394-396, Proceedings of the 1999 9th Great Lakes Symposium on VLSI (GLSVLSI '99), Ann Arbor, MI, USA, 03/4/99.

TY - GEN

T1 - Transport in split gate MOS quantum dot structures

AU - Goodnick, S. M.

AU - Bird, J.

AU - Ferry, D. K.

AU - Gunther, A. D.

AU - Khoury, M. D.

AU - Kozicki, M.

AU - Rack, M. J.

AU - Thornton, T. J.

AU - Vasileska-Kafedezka, D.

PY - 1999

Y1 - 1999

N2 - A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy level within the dot as well as the interaction of the electrons with one another.

AB - A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy level within the dot as well as the interaction of the electrons with one another.

UR - https://www.scopus.com/pages/publications/0033353818

M3 - Conference contribution

AN - SCOPUS:0033353818

SN - 0769501044

T3 - Proceedings of the IEEE Great Lakes Symposium on VLSI

SP - 394

EP - 396

BT - Proceedings of the IEEE Great Lakes Symposium on VLSI

PB - IEEE

T2 - Proceedings of the 1999 9th Great Lakes Symposium on VLSI (GLSVLSI '99)

Y2 - 4 March 1999 through 6 March 1999

ER -

Transport in split gate MOS quantum dot structures

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