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Transport and magnetic properties of ferromagnetic GaAs/Mn digital alloys

  • H. Luo
  • , B. D. McCombe
  • , M. H. Na
  • , K. Mooney
  • , F. Lehmann
  • , X. Chen
  • , M. Cheon
  • , S. M. Wang
  • , Y. Sasaki
  • , X. Liu
  • , J. K. Furdyna
  • SUNY Buffalo
  • University of Notre Dame

Research output: Contribution to journalConference articlepeer-review

26 Scopus citations

Abstract

Magnetic and transport properties of two-dimensional (2D) Mn layers in GaAs/Mn digital alloys have been determined as a function of Mn layer coverage. Ferromagnetism was observed in samples having more than 10% Mn in each Mn-containing layer. The Curie temperature showed a strong correlation with the effective spin density in the digital alloy samples. Magnetotransport studies revealed activated behavior hole conductivity consistent with variable range hopping in two dimensions. The general features of magnetoresistance and the anomalous Hall effect are similar to those seen in metallic ferromagnetic GaMnAs. However, the temperature dependence of the observed negative magnetoresistance follows the pattern seen in insulating ferromagnetic GaMnAs.

Original languageEnglish
Pages (from-to)366-369
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
DOIs
StatePublished - Jan 2002
Event14th International Conference on the - Prague, Czech Republic
Duration: Jul 30 2001Aug 3 2001

Keywords

  • Magnetic semiconductors
  • Spintronics

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