Transition metal-doped chalcogenide perovskite magnetic semiconductor BaZrS3

Zhonghai Yu; Chenhua Deng; Sen Kong; Haolei Hui; Jiale Guo; Qizhong Zhao; Fanghua Tian; Chao Zhou; Yin Zhang; Sen Yang; Hao Zeng

doi:10.1016/j.jmmm.2022.169886

Transition metal-doped chalcogenide perovskite magnetic semiconductor BaZrS₃

Zhonghai Yu
, Chenhua Deng
, Sen Kong
, Haolei Hui
, Jiale Guo
, Qizhong Zhao
, Fanghua Tian
, Chao Zhou
, Yin Zhang
, Sen Yang
, Hao Zeng

Physics

Xi'an Jiaotong University
Taiyuan Normal University
SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Diluted magnetic semiconductors (DMSs) are an important type of materials for spintronic applications. Conventional DMSs are typically based on transition metal doped III-V and II-VI materials such as GaAs and CdSe. In this work, we show that a new DMS material can be realized by transition metal doping in BaZrS₃, a prototypical chalcogenide perovskite semiconductor. Mn and Fe elements are doped into the BaZrS₃ lattice with a concentration of up to 5%. In particular, Fe-doped BaZrS₃ exhibits room temperature ferromagnetism.

Original language	English
Article number	169886
Journal	Journal of Magnetism and Magnetic Materials
Volume	563
DOIs	https://doi.org/10.1016/j.jmmm.2022.169886
State	Published - Dec 1 2022

Keywords

Chalcogenide perovskite
Diluted magnetic semiconductors
Exchange interactions
Room temperature ferromagnetism

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10.1016/j.jmmm.2022.169886

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title = "Transition metal-doped chalcogenide perovskite magnetic semiconductor BaZrS3",

abstract = "Diluted magnetic semiconductors (DMSs) are an important type of materials for spintronic applications. Conventional DMSs are typically based on transition metal doped III-V and II-VI materials such as GaAs and CdSe. In this work, we show that a new DMS material can be realized by transition metal doping in BaZrS3, a prototypical chalcogenide perovskite semiconductor. Mn and Fe elements are doped into the BaZrS3 lattice with a concentration of up to 5\%. In particular, Fe-doped BaZrS3 exhibits room temperature ferromagnetism.",

keywords = "Chalcogenide perovskite, Diluted magnetic semiconductors, Exchange interactions, Room temperature ferromagnetism",

author = "Zhonghai Yu and Chenhua Deng and Sen Kong and Haolei Hui and Jiale Guo and Qizhong Zhao and Fanghua Tian and Chao Zhou and Yin Zhang and Sen Yang and Hao Zeng",

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T1 - Transition metal-doped chalcogenide perovskite magnetic semiconductor BaZrS3

AU - Yu, Zhonghai

AU - Deng, Chenhua

AU - Kong, Sen

AU - Hui, Haolei

AU - Guo, Jiale

AU - Zhao, Qizhong

AU - Tian, Fanghua

AU - Zhou, Chao

AU - Zhang, Yin

AU - Yang, Sen

AU - Zeng, Hao

PY - 2022/12/1

Y1 - 2022/12/1

N2 - Diluted magnetic semiconductors (DMSs) are an important type of materials for spintronic applications. Conventional DMSs are typically based on transition metal doped III-V and II-VI materials such as GaAs and CdSe. In this work, we show that a new DMS material can be realized by transition metal doping in BaZrS3, a prototypical chalcogenide perovskite semiconductor. Mn and Fe elements are doped into the BaZrS3 lattice with a concentration of up to 5%. In particular, Fe-doped BaZrS3 exhibits room temperature ferromagnetism.

AB - Diluted magnetic semiconductors (DMSs) are an important type of materials for spintronic applications. Conventional DMSs are typically based on transition metal doped III-V and II-VI materials such as GaAs and CdSe. In this work, we show that a new DMS material can be realized by transition metal doping in BaZrS3, a prototypical chalcogenide perovskite semiconductor. Mn and Fe elements are doped into the BaZrS3 lattice with a concentration of up to 5%. In particular, Fe-doped BaZrS3 exhibits room temperature ferromagnetism.

KW - Chalcogenide perovskite

KW - Diluted magnetic semiconductors

KW - Exchange interactions

KW - Room temperature ferromagnetism

UR - https://www.scopus.com/pages/publications/85137600046

U2 - 10.1016/j.jmmm.2022.169886

DO - 10.1016/j.jmmm.2022.169886

M3 - Article

AN - SCOPUS:85137600046

SN - 0304-8853

VL - 563

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

M1 - 169886

ER -

Transition metal-doped chalcogenide perovskite magnetic semiconductor BaZrS₃

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