Transient characteristics of β-Ga₂O₃nanomembrane Schottky barrier diodes on various substrates

In this paper, transient delayed rise and fall times for beta gallium oxide (β-Ga2O3) nanomembrane (NM) Schottky barrier diodes (SBDs) formed on four different substrates (diamond, Si, sapphire, and polyimide) were measured using a sub-micron second resolution time-resolved electrical measurement system under different temperature conditions. The devices exhibited noticeably less-delayed turn on/turn off transient time when β-Ga2O3 NM SBDs were built on a high thermal conductive (high-k) substrate. Furthermore, a relationship between the β-Ga2O3 NM thicknesses under different temperature conditions and their transient characteristics were systematically investigated and verified it using a multiphysics simulator. Overall, our results revealed the impact of various substrates with different thermal properties and different β-Ga2O3 NM thicknesses on the performance of β-Ga2O3 NM-based devices. Thus, the high-k substrate integration strategy will help design future β-Ga2O3-based devices by maximizing heat dissipation from the β-Ga2O3 layer.