Transformation characteristics in thin film SMA heterostructures

Susan Z. Hua; C. M. Su; M. Wuttig

Transformation characteristics in thin film SMA heterostructures

Susan Z. Hua
, C. M. Su
, M. Wuttig

Department of Mechanical and Aerospace Engineering

University of Maryland, College Park

Research output: Contribution to journal › Conference article › peer-review

8 Scopus citations

Abstract

Shape memory alloy (SMA) thin films have attracted attention due to their potential application as actuators in micromechanical systems. The stress development in Ni₅₀Ti₅₀ films has been measured using a cantilever beam method. It is of interest to study their transformation characteristics. We have investigated a striking change of the stress during B2-B19 transformation. We have investigated a striking change of the stress during reflects the interface constraint. In order to obtain direct information about the interface, in situ cross-section TEM observation of NiTi/SiO₂ /Si heterostructures was performed at various temperatures. A layer of parent phase at the film/substrate interface was found to buffer the transformation induced stress. The origin and effect of this buffer layer was analysed based on the TEM cross-sectional observation of the formation history of the layer.

Original language	English
Pages (from-to)	33-37
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	308
State	Published - 1993
Event	Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 12 1993 → Apr 16 1993

Cite this

@article{44a5e9238d73457d9faf34b435025610,

title = "Transformation characteristics in thin film SMA heterostructures",

abstract = "Shape memory alloy (SMA) thin films have attracted attention due to their potential application as actuators in micromechanical systems. The stress development in Ni50Ti50 films has been measured using a cantilever beam method. It is of interest to study their transformation characteristics. We have investigated a striking change of the stress during B2-B19 transformation. We have investigated a striking change of the stress during reflects the interface constraint. In order to obtain direct information about the interface, in situ cross-section TEM observation of NiTi/SiO2 /Si heterostructures was performed at various temperatures. A layer of parent phase at the film/substrate interface was found to buffer the transformation induced stress. The origin and effect of this buffer layer was analysed based on the TEM cross-sectional observation of the formation history of the layer.",

author = "Hua, \{Susan Z.\} and Su, \{C. M.\} and M. Wuttig",

year = "1993",

language = "English",

volume = "308",

pages = "33--37",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1993 Spring Meeting of the Materials Research Society ; Conference date: 12-04-1993 Through 16-04-1993",

}

TY - JOUR

T1 - Transformation characteristics in thin film SMA heterostructures

AU - Hua, Susan Z.

AU - Su, C. M.

AU - Wuttig, M.

PY - 1993

Y1 - 1993

N2 - Shape memory alloy (SMA) thin films have attracted attention due to their potential application as actuators in micromechanical systems. The stress development in Ni50Ti50 films has been measured using a cantilever beam method. It is of interest to study their transformation characteristics. We have investigated a striking change of the stress during B2-B19 transformation. We have investigated a striking change of the stress during reflects the interface constraint. In order to obtain direct information about the interface, in situ cross-section TEM observation of NiTi/SiO2 /Si heterostructures was performed at various temperatures. A layer of parent phase at the film/substrate interface was found to buffer the transformation induced stress. The origin and effect of this buffer layer was analysed based on the TEM cross-sectional observation of the formation history of the layer.

AB - Shape memory alloy (SMA) thin films have attracted attention due to their potential application as actuators in micromechanical systems. The stress development in Ni50Ti50 films has been measured using a cantilever beam method. It is of interest to study their transformation characteristics. We have investigated a striking change of the stress during B2-B19 transformation. We have investigated a striking change of the stress during reflects the interface constraint. In order to obtain direct information about the interface, in situ cross-section TEM observation of NiTi/SiO2 /Si heterostructures was performed at various temperatures. A layer of parent phase at the film/substrate interface was found to buffer the transformation induced stress. The origin and effect of this buffer layer was analysed based on the TEM cross-sectional observation of the formation history of the layer.

UR - https://www.scopus.com/pages/publications/0027834605

M3 - Conference article

AN - SCOPUS:0027834605

SN - 0272-9172

VL - 308

SP - 33

EP - 37

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1993 Spring Meeting of the Materials Research Society

Y2 - 12 April 1993 through 16 April 1993

ER -

Transformation characteristics in thin film SMA heterostructures

Abstract

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