Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction

Dong Liu; Sang Jung Cho; Aaron Hardy; Jisoo Kim; Cristian J. Herrera-Rodriguez; Edward Swinnich; Mohadeseh A. Baboli; Jiarui Gong; Xenofon Konstantinou; John Papapolymerou; Parsian K. Mohseni; Michael Becker; Jung Hun Seo; John D. Albrecht; Timothy Grotjohn; Zhenqiang Ma

doi:10.1109/BCICTS45179.2019.8972766

Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction

Dong Liu
, Sang Jung Cho
, Aaron Hardy
, Jisoo Kim
, Cristian J. Herrera-Rodriguez
, Edward Swinnich
, Mohadeseh A. Baboli
, Jiarui Gong
, Xenofon Konstantinou
, John Papapolymerou
, Parsian K. Mohseni
, Michael Becker
, Jung Hun Seo
, John D. Albrecht
, Timothy Grotjohn
, Zhenqiang Ma

Department of Materials Design and Innovation

University of Wisconsin-Madison
Fraunhofer USA, Inc.
Michigan State University
SUNY Buffalo
Rochester Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We demonstrated GaAs/diamond (GaAs-C^sp3) np diodes via lattice-mismatched semiconductor grafting: forming heterostructures with an ultrathin oxide (UO) layer at the interface. High-performance rectifying characteristics were measured from the GaAs/C^sp3 diodes with sharp reverse breakdown voltage (Vb) of -44.5 V. Capacitance-voltage (CV) measurements were carried out and the measurement results were used to construct the band diagram of the pn junction. Furthermore, an AlGaAs/GaAs/C^sp3 pnp structure was fabricated and both junctions were characterized for their I-V characteristics. The results show the prospect of realization of pnp AlGaAs/GaAs/C^sp3 HBTs in the future.

Original language	English
Title of host publication	2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728105864
DOIs	https://doi.org/10.1109/BCICTS45179.2019.8972766
State	Published - Nov 2019
Event	2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 - Nashville, United States Duration: Nov 3 2019 → Nov 6 2019

Publication series

Name	2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019

Conference

Conference	2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019
Country/Territory	United States
City	Nashville
Period	11/3/19 → 11/6/19

Keywords

Diamond
UWGB
diode
heterojunction
lattice-mismatch
semiconductor grafting

Access to Document

10.1109/BCICTS45179.2019.8972766

Cite this

Liu, D., Cho, S. J., Hardy, A., Kim, J., Herrera-Rodriguez, C. J., Swinnich, E., Baboli, M. A., Gong, J., Konstantinou, X., Papapolymerou, J., Mohseni, P. K., Becker, M., Seo, J. H., Albrecht, J. D., Grotjohn, T., & Ma, Z. (2019). Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction. In 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 Article 8972766 (2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCICTS45179.2019.8972766

Liu, Dong ; Cho, Sang Jung ; Hardy, Aaron et al. / Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction. 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019).

@inproceedings{6193380c16394f39bace68d8e3ec0ee5,

title = "Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction",

abstract = "We demonstrated GaAs/diamond (GaAs-Csp3) np diodes via lattice-mismatched semiconductor grafting: forming heterostructures with an ultrathin oxide (UO) layer at the interface. High-performance rectifying characteristics were measured from the GaAs/Csp3 diodes with sharp reverse breakdown voltage (Vb) of -44.5 V. Capacitance-voltage (CV) measurements were carried out and the measurement results were used to construct the band diagram of the pn junction. Furthermore, an AlGaAs/GaAs/Csp3 pnp structure was fabricated and both junctions were characterized for their I-V characteristics. The results show the prospect of realization of pnp AlGaAs/GaAs/Csp3 HBTs in the future.",

keywords = "Diamond, UWGB, diode, heterojunction, lattice-mismatch, semiconductor grafting",

author = "Dong Liu and Cho, \{Sang Jung\} and Aaron Hardy and Jisoo Kim and Herrera-Rodriguez, \{Cristian J.\} and Edward Swinnich and Baboli, \{Mohadeseh A.\} and Jiarui Gong and Xenofon Konstantinou and John Papapolymerou and Mohseni, \{Parsian K.\} and Michael Becker and Seo, \{Jung Hun\} and Albrecht, \{John D.\} and Timothy Grotjohn and Zhenqiang Ma",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019 ; Conference date: 03-11-2019 Through 06-11-2019",

year = "2019",

month = nov,

doi = "10.1109/BCICTS45179.2019.8972766",

language = "English",

series = "2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019",

address = "United States",

}

Liu, D, Cho, SJ, Hardy, A, Kim, J, Herrera-Rodriguez, CJ, Swinnich, E, Baboli, MA, Gong, J, Konstantinou, X, Papapolymerou, J, Mohseni, PK, Becker, M, Seo, JH, Albrecht, JD, Grotjohn, T & Ma, Z 2019, Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction. in 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019., 8972766, 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019, Institute of Electrical and Electronics Engineers Inc., 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019, Nashville, United States, 11/3/19. https://doi.org/10.1109/BCICTS45179.2019.8972766

Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction. / Liu, Dong; Cho, Sang Jung; Hardy, Aaron et al.
2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8972766 (2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction

AU - Liu, Dong

AU - Cho, Sang Jung

AU - Hardy, Aaron

AU - Kim, Jisoo

AU - Herrera-Rodriguez, Cristian J.

AU - Swinnich, Edward

AU - Baboli, Mohadeseh A.

AU - Gong, Jiarui

AU - Konstantinou, Xenofon

AU - Papapolymerou, John

AU - Mohseni, Parsian K.

AU - Becker, Michael

AU - Seo, Jung Hun

AU - Albrecht, John D.

AU - Grotjohn, Timothy

AU - Ma, Zhenqiang

PY - 2019/11

Y1 - 2019/11

N2 - We demonstrated GaAs/diamond (GaAs-Csp3) np diodes via lattice-mismatched semiconductor grafting: forming heterostructures with an ultrathin oxide (UO) layer at the interface. High-performance rectifying characteristics were measured from the GaAs/Csp3 diodes with sharp reverse breakdown voltage (Vb) of -44.5 V. Capacitance-voltage (CV) measurements were carried out and the measurement results were used to construct the band diagram of the pn junction. Furthermore, an AlGaAs/GaAs/Csp3 pnp structure was fabricated and both junctions were characterized for their I-V characteristics. The results show the prospect of realization of pnp AlGaAs/GaAs/Csp3 HBTs in the future.

AB - We demonstrated GaAs/diamond (GaAs-Csp3) np diodes via lattice-mismatched semiconductor grafting: forming heterostructures with an ultrathin oxide (UO) layer at the interface. High-performance rectifying characteristics were measured from the GaAs/Csp3 diodes with sharp reverse breakdown voltage (Vb) of -44.5 V. Capacitance-voltage (CV) measurements were carried out and the measurement results were used to construct the band diagram of the pn junction. Furthermore, an AlGaAs/GaAs/Csp3 pnp structure was fabricated and both junctions were characterized for their I-V characteristics. The results show the prospect of realization of pnp AlGaAs/GaAs/Csp3 HBTs in the future.

KW - Diamond

KW - UWGB

KW - diode

KW - heterojunction

KW - lattice-mismatch

KW - semiconductor grafting

UR - https://www.scopus.com/pages/publications/85079213549

U2 - 10.1109/BCICTS45179.2019.8972766

DO - 10.1109/BCICTS45179.2019.8972766

M3 - Conference contribution

AN - SCOPUS:85079213549

T3 - 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019

BT - 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019

Y2 - 3 November 2019 through 6 November 2019

ER -

Liu D, Cho SJ, Hardy A, Kim J, Herrera-Rodriguez CJ, Swinnich E et al. Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction. In 2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8972766. (2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2019). doi: 10.1109/BCICTS45179.2019.8972766

Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction

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Keywords

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