Time-resolved-spectrum studies of GaN light emitting diodes

F. S. Choa; J. Y. Fan; P. L. Liu; J. Sipior; G. Rao; G. M. Carter; Y. J. Chen

doi:10.1063/1.117183

Time-resolved-spectrum studies of GaN light emitting diodes

F. S. Choa
, J. Y. Fan
, P. L. Liu
, J. Sipior
, G. Rao
, G. M. Carter
, Y. J. Chen

Department of Electrical Engineering

University of Maryland, Baltimore County
University of Maryland, Baltimore

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Time-resolved-emission spectra of InGaN and GaN light emitting diodes with different device structure are studied. Result shows that the UV generation from bulk materials and blue and green emissions from single quantum well devices are band edge recombination.

Original language	English
Pages (from-to)	3668-3670
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	24
DOIs	https://doi.org/10.1063/1.117183
State	Published - Dec 9 1996

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10.1063/1.117183

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@article{342825ac4ffc47498df236225524d1df,

title = "Time-resolved-spectrum studies of GaN light emitting diodes",

abstract = "Time-resolved-emission spectra of InGaN and GaN light emitting diodes with different device structure are studied. Result shows that the UV generation from bulk materials and blue and green emissions from single quantum well devices are band edge recombination.",

author = "Choa, \{F. S.\} and Fan, \{J. Y.\} and Liu, \{P. L.\} and J. Sipior and G. Rao and Carter, \{G. M.\} and Chen, \{Y. J.\}",

year = "1996",

month = dec,

day = "9",

doi = "10.1063/1.117183",

language = "English",

volume = "69",

pages = "3668--3670",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "24",

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TY - JOUR

T1 - Time-resolved-spectrum studies of GaN light emitting diodes

AU - Choa, F. S.

AU - Fan, J. Y.

AU - Liu, P. L.

AU - Sipior, J.

AU - Rao, G.

AU - Carter, G. M.

AU - Chen, Y. J.

PY - 1996/12/9

Y1 - 1996/12/9

N2 - Time-resolved-emission spectra of InGaN and GaN light emitting diodes with different device structure are studied. Result shows that the UV generation from bulk materials and blue and green emissions from single quantum well devices are band edge recombination.

AB - Time-resolved-emission spectra of InGaN and GaN light emitting diodes with different device structure are studied. Result shows that the UV generation from bulk materials and blue and green emissions from single quantum well devices are band edge recombination.

UR - https://www.scopus.com/pages/publications/0030577333

U2 - 10.1063/1.117183

DO - 10.1063/1.117183

M3 - Article

AN - SCOPUS:0030577333

SN - 0003-6951

VL - 69

SP - 3668

EP - 3670

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

ER -

Time-resolved-spectrum studies of GaN light emitting diodes

Abstract

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