Time resolved spectra study of GaN light emitting diodes (LEDs)

F. S. Choa; J. Y. Fan; P. L. Liu; J. Sipior; G. Rao; G. M. Carter; Y. J. Chen

Time resolved spectra study of GaN light emitting diodes (LEDs)

F. S. Choa
, J. Y. Fan
, P. L. Liu
, J. Sipior
, G. Rao
, G. M. Carter
, Y. J. Chen

Department of Electrical Engineering

University of Maryland, Baltimore County

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The time-resolved-spectra of InGaN and GaN lightemitting diodes with short electrical pulses were studied using a Spex 1250 M monochromator with a photomultiplier tube (PMT). The LED were soldered to SMA connectors driven by a DC current source and an HP 214B pulse generator. The output from the PMT was connected to a Tek 7854 sampling oscilloscopes and transmitted to a plotter to record all the time resolved spectra. Ultraviolet (UV) emissions from the bulk GaN and InGaN materials as well as the blue and green emission from the InGaN SQW LEDs revealed that the materials are prone to band edge transitions.

Original language	English
Pages (from-to)	278-279
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - 1996
Event	Proceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2) - Boston, MA, USA Duration: Nov 18 1996 → Nov 19 1996

Cite this

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title = "Time resolved spectra study of GaN light emitting diodes (LEDs)",

abstract = "The time-resolved-spectra of InGaN and GaN lightemitting diodes with short electrical pulses were studied using a Spex 1250 M monochromator with a photomultiplier tube (PMT). The LED were soldered to SMA connectors driven by a DC current source and an HP 214B pulse generator. The output from the PMT was connected to a Tek 7854 sampling oscilloscopes and transmitted to a plotter to record all the time resolved spectra. Ultraviolet (UV) emissions from the bulk GaN and InGaN materials as well as the blue and green emission from the InGaN SQW LEDs revealed that the materials are prone to band edge transitions.",

author = "Choa, \{F. S.\} and Fan, \{J. Y.\} and Liu, \{P. L.\} and J. Sipior and G. Rao and Carter, \{G. M.\} and Chen, \{Y. J.\}",

year = "1996",

language = "English",

volume = "1",

pages = "278--279",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2) ; Conference date: 18-11-1996 Through 19-11-1996",

}

TY - JOUR

T1 - Time resolved spectra study of GaN light emitting diodes (LEDs)

AU - Choa, F. S.

AU - Fan, J. Y.

AU - Liu, P. L.

AU - Sipior, J.

AU - Rao, G.

AU - Carter, G. M.

AU - Chen, Y. J.

PY - 1996

Y1 - 1996

N2 - The time-resolved-spectra of InGaN and GaN lightemitting diodes with short electrical pulses were studied using a Spex 1250 M monochromator with a photomultiplier tube (PMT). The LED were soldered to SMA connectors driven by a DC current source and an HP 214B pulse generator. The output from the PMT was connected to a Tek 7854 sampling oscilloscopes and transmitted to a plotter to record all the time resolved spectra. Ultraviolet (UV) emissions from the bulk GaN and InGaN materials as well as the blue and green emission from the InGaN SQW LEDs revealed that the materials are prone to band edge transitions.

AB - The time-resolved-spectra of InGaN and GaN lightemitting diodes with short electrical pulses were studied using a Spex 1250 M monochromator with a photomultiplier tube (PMT). The LED were soldered to SMA connectors driven by a DC current source and an HP 214B pulse generator. The output from the PMT was connected to a Tek 7854 sampling oscilloscopes and transmitted to a plotter to record all the time resolved spectra. Ultraviolet (UV) emissions from the bulk GaN and InGaN materials as well as the blue and green emission from the InGaN SQW LEDs revealed that the materials are prone to band edge transitions.

UR - https://www.scopus.com/pages/publications/0030413864

M3 - Conference article

AN - SCOPUS:0030413864

SN - 1092-8081

VL - 1

SP - 278

EP - 279

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1996 9th Annual Meeting of IEEE Lasers and Electro-Optics Society, LEOS'96. Part 1 (of 2)

Y2 - 18 November 1996 through 19 November 1996

ER -

Time resolved spectra study of GaN light emitting diodes (LEDs)

Abstract

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