Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn-Se-Te superlattice structures

M. C.K. Cheung; A. N. Cartwright; I. R. Sellers; B. D. McCombe; I. L. Kuskovsky

doi:10.1063/1.2835699

Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn-Se-Te superlattice structures

M. C.K. Cheung
, A. N. Cartwright
, I. R. Sellers
, B. D. McCombe
, I. L. Kuskovsky

SUNY Buffalo
City University of New York

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Spectrally and time-resolved photoluminescence of a ZnTeZnSe superlattice reveals a smooth transition of the photoluminescence (PL) lifetime from ∼100 ns at 2.35 eV to less than a few nanoseconds at 2.8 eV. The significant increase of the lifetime in the low energy region is strong evidence to support the formation of type-II quantum dots (QDs), since in these nanostructures the spatial separation of carriers is increased. The shorter lived emission above 2.5 eV is attributed to excitons bound to Te isoelectronic centers in the ZnSe matrix. The smooth transition of the PL lifetime confirms that clusters of these Te atoms evolve into type-II ZnTeZnSe QDs.

Original language	English
Article number	032106
Journal	Applied Physics Letters
Volume	92
Issue number	3
DOIs	https://doi.org/10.1063/1.2835699
State	Published - 2008

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title = "Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn-Se-Te superlattice structures",

abstract = "Spectrally and time-resolved photoluminescence of a ZnTeZnSe superlattice reveals a smooth transition of the photoluminescence (PL) lifetime from ∼100 ns at 2.35 eV to less than a few nanoseconds at 2.8 eV. The significant increase of the lifetime in the low energy region is strong evidence to support the formation of type-II quantum dots (QDs), since in these nanostructures the spatial separation of carriers is increased. The shorter lived emission above 2.5 eV is attributed to excitons bound to Te isoelectronic centers in the ZnSe matrix. The smooth transition of the PL lifetime confirms that clusters of these Te atoms evolve into type-II ZnTeZnSe QDs.",

author = "Cheung, \{M. C.K.\} and Cartwright, \{A. N.\} and Sellers, \{I. R.\} and McCombe, \{B. D.\} and Kuskovsky, \{I. L.\}",

year = "2008",

doi = "10.1063/1.2835699",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn-Se-Te superlattice structures

AU - Cheung, M. C.K.

AU - Cartwright, A. N.

AU - Sellers, I. R.

AU - McCombe, B. D.

AU - Kuskovsky, I. L.

PY - 2008

Y1 - 2008

N2 - Spectrally and time-resolved photoluminescence of a ZnTeZnSe superlattice reveals a smooth transition of the photoluminescence (PL) lifetime from ∼100 ns at 2.35 eV to less than a few nanoseconds at 2.8 eV. The significant increase of the lifetime in the low energy region is strong evidence to support the formation of type-II quantum dots (QDs), since in these nanostructures the spatial separation of carriers is increased. The shorter lived emission above 2.5 eV is attributed to excitons bound to Te isoelectronic centers in the ZnSe matrix. The smooth transition of the PL lifetime confirms that clusters of these Te atoms evolve into type-II ZnTeZnSe QDs.

AB - Spectrally and time-resolved photoluminescence of a ZnTeZnSe superlattice reveals a smooth transition of the photoluminescence (PL) lifetime from ∼100 ns at 2.35 eV to less than a few nanoseconds at 2.8 eV. The significant increase of the lifetime in the low energy region is strong evidence to support the formation of type-II quantum dots (QDs), since in these nanostructures the spatial separation of carriers is increased. The shorter lived emission above 2.5 eV is attributed to excitons bound to Te isoelectronic centers in the ZnSe matrix. The smooth transition of the PL lifetime confirms that clusters of these Te atoms evolve into type-II ZnTeZnSe QDs.

UR - https://www.scopus.com/pages/publications/38549140535

U2 - 10.1063/1.2835699

DO - 10.1063/1.2835699

M3 - Article

AN - SCOPUS:38549140535

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032106

ER -

Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn-Se-Te superlattice structures

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