THz quantum hall conductivity studies in a GaAs heterojunction

A. V. Stier; H. Zhang; C. T. Ellis; D. Eason; G. Strasser; B. D. McCombe; J. Cerne

doi:10.1063/1.3666534

THz quantum hall conductivity studies in a GaAs heterojunction

A. V. Stier
, H. Zhang
, C. T. Ellis
, D. Eason
, G. Strasser
, B. D. McCombe
, J. Cerne

Physics

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We report on Faraday rotation measurements in the THz regime of a two dimensional electron gas in the magnetic field region of cyclotron resonance. Clear steps at several filling factors in the Faraday rotation as a function of carrier density are interpreted as THz ac quantum Hall plateaus. Unlike the dc case, the steps are not quantized but they do depend on filling factor.

Original language	English
Title of host publication	Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages	627-628
Number of pages	2
DOIs	https://doi.org/10.1063/1.3666534
State	Published - 2011
Event	30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of Duration: Jul 25 2010 → Jul 30 2010

Publication series

Name	AIP Conference Proceedings
Volume	1399
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	30th International Conference on the Physics of Semiconductors, ICPS-30
Country/Territory	Korea, Republic of
City	Seoul
Period	07/25/10 → 07/30/10

Keywords

Faraday Effect
magneto-optics
quantum Hall effect
terahertz

Access to Document

10.1063/1.3666534

Cite this

@inproceedings{130d33232aac4e2c96fe76cdc59de36d,

title = "THz quantum hall conductivity studies in a GaAs heterojunction",

abstract = "We report on Faraday rotation measurements in the THz regime of a two dimensional electron gas in the magnetic field region of cyclotron resonance. Clear steps at several filling factors in the Faraday rotation as a function of carrier density are interpreted as THz ac quantum Hall plateaus. Unlike the dc case, the steps are not quantized but they do depend on filling factor.",

keywords = "Faraday Effect, magneto-optics, quantum Hall effect, terahertz",

author = "Stier, \{A. V.\} and H. Zhang and Ellis, \{C. T.\} and D. Eason and G. Strasser and McCombe, \{B. D.\} and J. Cerne",

year = "2011",

doi = "10.1063/1.3666534",

language = "English",

isbn = "9780735410022",

series = "AIP Conference Proceedings",

pages = "627--628",

booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",

note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",

}

Stier, AV, Zhang, H, Ellis, CT, Eason, D, Strasser, G, McCombe, BD & Cerne, J 2011, THz quantum hall conductivity studies in a GaAs heterojunction. in Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. AIP Conference Proceedings, vol. 1399, pp. 627-628, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, Korea, Republic of, 07/25/10. https://doi.org/10.1063/1.3666534

THz quantum hall conductivity studies in a GaAs heterojunction. / Stier, A. V.; Zhang, H.; Ellis, C. T. et al.
Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30. 2011. p. 627-628 (AIP Conference Proceedings; Vol. 1399).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - THz quantum hall conductivity studies in a GaAs heterojunction

AU - Stier, A. V.

AU - Zhang, H.

AU - Ellis, C. T.

AU - Eason, D.

AU - Strasser, G.

AU - McCombe, B. D.

AU - Cerne, J.

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AB - We report on Faraday rotation measurements in the THz regime of a two dimensional electron gas in the magnetic field region of cyclotron resonance. Clear steps at several filling factors in the Faraday rotation as a function of carrier density are interpreted as THz ac quantum Hall plateaus. Unlike the dc case, the steps are not quantized but they do depend on filling factor.

KW - Faraday Effect

KW - magneto-optics

KW - quantum Hall effect

KW - terahertz

UR - https://www.scopus.com/pages/publications/84862776832

U2 - 10.1063/1.3666534

DO - 10.1063/1.3666534

M3 - Conference contribution

AN - SCOPUS:84862776832

SN - 9780735410022

T3 - AIP Conference Proceedings

SP - 627

EP - 628

BT - Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30

T2 - 30th International Conference on the Physics of Semiconductors, ICPS-30

Y2 - 25 July 2010 through 30 July 2010

ER -

THz quantum hall conductivity studies in a GaAs heterojunction

Abstract

Publication series

Conference

Keywords

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