Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

Lihong Teng; Wayne A. Anderson

doi:10.1557/proc-769-h2.4

Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

Lihong Teng
, Wayne A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm ²/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×10⁶, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3. 9 cm²/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0. 73 V/dec and an ON/OFF current ratio of 4×10⁶. Comparison is made to TFT's with the Si deposited at 400°C on glass.

Original language	English
Pages (from-to)	41-46
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	769
DOIs	https://doi.org/10.1557/proc-769-h2.4
State	Published - 2003
Event	Flexible Electronics - Materials and Device Technology - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 25 2003

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@article{664b69e723cf495a9d76a8cab442010f,

title = "Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD",

abstract = "The properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm 2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3. 9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0. 73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.",

author = "Lihong Teng and Anderson, \{Wayne A.\}",

year = "2003",

doi = "10.1557/proc-769-h2.4",

language = "English",

volume = "769",

pages = "41--46",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Flexible Electronics - Materials and Device Technology ; Conference date: 22-04-2003 Through 25-04-2003",

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TY - JOUR

T1 - Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

AU - Teng, Lihong

AU - Anderson, Wayne A.

PY - 2003

Y1 - 2003

N2 - The properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm 2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3. 9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0. 73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.

AB - The properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm 2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3. 9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0. 73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.

UR - https://www.scopus.com/pages/publications/1542304723

U2 - 10.1557/proc-769-h2.4

DO - 10.1557/proc-769-h2.4

M3 - Conference article

AN - SCOPUS:1542304723

SN - 0272-9172

VL - 769

SP - 41

EP - 46

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Flexible Electronics - Materials and Device Technology

Y2 - 22 April 2003 through 25 April 2003

ER -

Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

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