Thin film polycrystalline Si by a novel solution growth technique

Richard L. Wallace; Wayne A. Anderson; K. M. Jones

Thin film polycrystalline Si by a novel solution growth technique

Richard L. Wallace
, Wayne A. Anderson
, K. M. Jones

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

A solution growth technique has been developed capable of deposition large grain (up to 20-30 μm) Si films at temperatures no higher than 650°C. XRD analysis of the deposited films show a strong (111) preferred orientation, depending on the use of a wetting agent during growth. A well-defined grain structure is seen by SEM examination. Films deposited using an In-Si solution are p-type; those from Sn-Si solutions are n-type. Carrier concentrations range from the low 10¹⁶ cm^-3 to the mid 10¹⁷ cm^-3 range. Conductivities as high as .2 (Ωcm)^-1 were measured. Hall effect measurements showed hole mobilities as high as approx. 30 cm²V^-1s^-1. Photoresponse is reduced for films deposited with a wetting agent.

Original language	English
Pages (from-to)	1379-1382
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2
State	Published - 1994
Event	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: Dec 5 1994 → Dec 9 1994

Cite this

@article{66f163a36f1343a79a3290865600425c,

title = "Thin film polycrystalline Si by a novel solution growth technique",

abstract = "A solution growth technique has been developed capable of deposition large grain (up to 20-30 μm) Si films at temperatures no higher than 650°C. XRD analysis of the deposited films show a strong (111) preferred orientation, depending on the use of a wetting agent during growth. A well-defined grain structure is seen by SEM examination. Films deposited using an In-Si solution are p-type; those from Sn-Si solutions are n-type. Carrier concentrations range from the low 1016 cm-3 to the mid 1017 cm-3 range. Conductivities as high as .2 (Ωcm)-1 were measured. Hall effect measurements showed hole mobilities as high as approx. 30 cm2V-1s-1. Photoresponse is reduced for films deposited with a wetting agent.",

author = "Wallace, \{Richard L.\} and Anderson, \{Wayne A.\} and Jones, \{K. M.\}",

year = "1994",

language = "English",

volume = "2",

pages = "1379--1382",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) ; Conference date: 05-12-1994 Through 09-12-1994",

}

TY - JOUR

T1 - Thin film polycrystalline Si by a novel solution growth technique

AU - Wallace, Richard L.

AU - Anderson, Wayne A.

AU - Jones, K. M.

PY - 1994

Y1 - 1994

N2 - A solution growth technique has been developed capable of deposition large grain (up to 20-30 μm) Si films at temperatures no higher than 650°C. XRD analysis of the deposited films show a strong (111) preferred orientation, depending on the use of a wetting agent during growth. A well-defined grain structure is seen by SEM examination. Films deposited using an In-Si solution are p-type; those from Sn-Si solutions are n-type. Carrier concentrations range from the low 1016 cm-3 to the mid 1017 cm-3 range. Conductivities as high as .2 (Ωcm)-1 were measured. Hall effect measurements showed hole mobilities as high as approx. 30 cm2V-1s-1. Photoresponse is reduced for films deposited with a wetting agent.

AB - A solution growth technique has been developed capable of deposition large grain (up to 20-30 μm) Si films at temperatures no higher than 650°C. XRD analysis of the deposited films show a strong (111) preferred orientation, depending on the use of a wetting agent during growth. A well-defined grain structure is seen by SEM examination. Films deposited using an In-Si solution are p-type; those from Sn-Si solutions are n-type. Carrier concentrations range from the low 1016 cm-3 to the mid 1017 cm-3 range. Conductivities as high as .2 (Ωcm)-1 were measured. Hall effect measurements showed hole mobilities as high as approx. 30 cm2V-1s-1. Photoresponse is reduced for films deposited with a wetting agent.

UR - https://www.scopus.com/pages/publications/0028702265

M3 - Conference article

AN - SCOPUS:0028702265

SN - 0160-8371

VL - 2

SP - 1379

EP - 1382

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)

Y2 - 5 December 1994 through 9 December 1994

ER -

Thin film polycrystalline Si by a novel solution growth technique

Abstract

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