Thermal degradation of homoepitaxial GaAs interfaces

W. Y. Lum; H. H. Wieder; W. H. Koschel; S. G. Bishop; B. D. McCombe

doi:10.1063/1.89215

Thermal degradation of homoepitaxial GaAs interfaces

W. Y. Lum
, H. H. Wieder
, W. H. Koschel
, S. G. Bishop
, B. D. McCombe

Physics

United States Navy
Naval Research Laboratory

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

Photoluminescence techniques have been used to detect and characterize p-type conducting layers formed on the surface of semi-insulating GaAs substrates and at the liquid phase epitaxial layer-GaAs substrate interface during pregrowth heat treatment. These layers contain ∼10¹⁷ cm^-3 shallow acceptors and a high density of arsenic vacancy complexes, and can be eliminated by pregrowth Ga etching of the substrate.

Original language	English
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1063/1.89215
State	Published - 1977

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title = "Thermal degradation of homoepitaxial GaAs interfaces",

abstract = "Photoluminescence techniques have been used to detect and characterize p-type conducting layers formed on the surface of semi-insulating GaAs substrates and at the liquid phase epitaxial layer-GaAs substrate interface during pregrowth heat treatment. These layers contain ∼1017 cm-3 shallow acceptors and a high density of arsenic vacancy complexes, and can be eliminated by pregrowth Ga etching of the substrate.",

author = "Lum, \{W. Y.\} and Wieder, \{H. H.\} and Koschel, \{W. H.\} and Bishop, \{S. G.\} and McCombe, \{B. D.\}",

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journal = "Applied Physics Letters",

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T1 - Thermal degradation of homoepitaxial GaAs interfaces

AU - Lum, W. Y.

AU - Wieder, H. H.

AU - Koschel, W. H.

AU - Bishop, S. G.

AU - McCombe, B. D.

PY - 1977

Y1 - 1977

N2 - Photoluminescence techniques have been used to detect and characterize p-type conducting layers formed on the surface of semi-insulating GaAs substrates and at the liquid phase epitaxial layer-GaAs substrate interface during pregrowth heat treatment. These layers contain ∼1017 cm-3 shallow acceptors and a high density of arsenic vacancy complexes, and can be eliminated by pregrowth Ga etching of the substrate.

AB - Photoluminescence techniques have been used to detect and characterize p-type conducting layers formed on the surface of semi-insulating GaAs substrates and at the liquid phase epitaxial layer-GaAs substrate interface during pregrowth heat treatment. These layers contain ∼1017 cm-3 shallow acceptors and a high density of arsenic vacancy complexes, and can be eliminated by pregrowth Ga etching of the substrate.

UR - https://www.scopus.com/pages/publications/33645078434

U2 - 10.1063/1.89215

DO - 10.1063/1.89215

M3 - Article

AN - SCOPUS:33645078434

SN - 0003-6951

VL - 30

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Thermal degradation of homoepitaxial GaAs interfaces

Abstract

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