TY - GEN
T1 - Thermal Characterization of Ga2O3 for Discrete Power Electronics Packaging
AU - Sircar, Arindam
AU - Yao, Xiu
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - Ga2O3 is an ultrawide bandgap material with the theoretical capability to surpass SiC and GaN in power electronic applications. Theoretically, it has higher breakdown voltage and better on-state resistance than its counterparts. However, Ga2O3 has extremely poor thermal conductivity which is about 10-20 times lower than SiC. This is a major hurdle in Ga2O3 device development. In this paper, authors analyze the steady-state thermal behavior of Ga2O3 devices with standard and advanced techniques used in discrete power electronic packages. Different geometry, cooling techniques, and material variations are characterized.
AB - Ga2O3 is an ultrawide bandgap material with the theoretical capability to surpass SiC and GaN in power electronic applications. Theoretically, it has higher breakdown voltage and better on-state resistance than its counterparts. However, Ga2O3 has extremely poor thermal conductivity which is about 10-20 times lower than SiC. This is a major hurdle in Ga2O3 device development. In this paper, authors analyze the steady-state thermal behavior of Ga2O3 devices with standard and advanced techniques used in discrete power electronic packages. Different geometry, cooling techniques, and material variations are characterized.
UR - https://www.scopus.com/pages/publications/105032535106
U2 - 10.1109/WiPDA63755.2025.11303442
DO - 10.1109/WiPDA63755.2025.11303442
M3 - Conference contribution
AN - SCOPUS:105032535106
T3 - 2025 IEEE 12th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2025
BT - 2025 IEEE 12th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2025
Y2 - 10 November 2025 through 12 November 2025
ER -