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Thermal and Structural Analysis of a Press-Pack Ga2O3 Schottky Diode

  • SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ga2O3 is an ultrawide bandgap material with the potential to replace SiC in Power Electronic applications. However, wide-scale adoption is hampered by its poor thermal conductivity. Conventional cooling techniques will be insufficient in cooling Ga2O3 devices. Double-side cooling is an efficient technique to achieve lower temperatures. Press-Pack packaging ensures electrical contact through pressure. It is inherently designed to support double-side cooling. In this paper, a Press-Pack package was designed to cool a Ga2O3 Schottky diode. Finite Element Analysis simulations were conducted in Ansys Icepak and Mechanical to evaluate its thermal and structural performance. Multiple design variations, heat losses, and cooling techniques were tested.

Original languageEnglish
Title of host publication2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331541309
DOIs
StatePublished - 2025
Event17th Annual IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025 - Philadelphia, United States
Duration: Oct 19 2025Oct 23 2025

Publication series

Name2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025

Conference

Conference17th Annual IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025
Country/TerritoryUnited States
CityPhiladelphia
Period10/19/2510/23/25

Keywords

  • Double-side cooling
  • Gallium Oxide
  • Press-Pack package

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