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Theory of oxygen-boron vacancy defect in cubic boron nitride: A diamond NV-isoelectronic center

  • Tesfaye A. Abtew
  • , Weiwei Gao
  • , Xiang Gao
  • , Y. Y. Sun
  • , S. B. Zhang
  • , Peihong Zhang
  • SUNY Buffalo
  • China Academy of Engineering Physics
  • Rensselaer Polytechnic Institute

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

A color center in c-BN which is isoelectronic to diamond NV- is predicted based on first-principles electronic structure calculations using the Heyd-Scuseria-Ernzerhof hybrid functional. The defect consists of a substitutional oxygen and an adjacent boron vacancy (ON-VB). We find that the ON-VB center is optically accessible with a zero-phonon line of about 1.6 eV. The ON-VB center also shares much of the characteristics of the GC-2 center often observed in c-BN. A prominent vibronic coupling peak is predicted to be around 55 meV, which is in excellent agreement with the characteristic phonon frequency (56 meV) observed in the luminescence spectra of the GC-2 center.

Original languageEnglish
Article number136401
JournalPhysical Review Letters
Volume113
Issue number3
DOIs
StatePublished - Sep 23 2014

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