The tunnel diode as a thyristor emitter

Z. S. Gribnikov; V. A. Korobov; V. V. Mitin

doi:10.1016/S0038-1101(97)00280-3

The tunnel diode as a thyristor emitter

Z. S. Gribnikov
, V. A. Korobov
, V. V. Mitin

Department of Electrical Engineering

Wayne State University

Research output: Contribution to journal › Article › peer-review

Abstract

We propose a tunnel switching mechanism for a thyristor. This mechanism can be realized if a tunnel pn-junction is used as the thyristor emitter. The switching current is fully determined by a junction peak tunnel current and weakly depends on temperature. Thus stabilization of the thyristor's switching and holding currents can be accomplished in a new way. The device voltage exhibits discontinuities as the device turns on. Results of numerical simulation of the tunnel emitter's effects on the thyristor's I-V characteristics are presented.

Original language	English
Pages (from-to)	1761-1763
Number of pages	3
Journal	Solid-State Electronics
Volume	42
Issue number	9
DOIs	https://doi.org/10.1016/S0038-1101(97)00280-3
State	Published - Sep 1 1998

Keywords

Semiconductor device simulation
Thyristor
Tunnel diode

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10.1016/S0038-1101(97)00280-3

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abstract = "We propose a tunnel switching mechanism for a thyristor. This mechanism can be realized if a tunnel pn-junction is used as the thyristor emitter. The switching current is fully determined by a junction peak tunnel current and weakly depends on temperature. Thus stabilization of the thyristor's switching and holding currents can be accomplished in a new way. The device voltage exhibits discontinuities as the device turns on. Results of numerical simulation of the tunnel emitter's effects on the thyristor's I-V characteristics are presented.",

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AU - Gribnikov, Z. S.

AU - Korobov, V. A.

AU - Mitin, V. V.

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Y1 - 1998/9/1

N2 - We propose a tunnel switching mechanism for a thyristor. This mechanism can be realized if a tunnel pn-junction is used as the thyristor emitter. The switching current is fully determined by a junction peak tunnel current and weakly depends on temperature. Thus stabilization of the thyristor's switching and holding currents can be accomplished in a new way. The device voltage exhibits discontinuities as the device turns on. Results of numerical simulation of the tunnel emitter's effects on the thyristor's I-V characteristics are presented.

AB - We propose a tunnel switching mechanism for a thyristor. This mechanism can be realized if a tunnel pn-junction is used as the thyristor emitter. The switching current is fully determined by a junction peak tunnel current and weakly depends on temperature. Thus stabilization of the thyristor's switching and holding currents can be accomplished in a new way. The device voltage exhibits discontinuities as the device turns on. Results of numerical simulation of the tunnel emitter's effects on the thyristor's I-V characteristics are presented.

KW - Semiconductor device simulation

KW - Thyristor

KW - Tunnel diode

UR - https://www.scopus.com/pages/publications/0032165493

U2 - 10.1016/S0038-1101(97)00280-3

DO - 10.1016/S0038-1101(97)00280-3

M3 - Article

AN - SCOPUS:0032165493

SN - 0038-1101

VL - 42

SP - 1761

EP - 1763

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 9

ER -

The tunnel diode as a thyristor emitter

Abstract

Keywords

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