Abstract
Polycrystalline silicon (poly‐Si) materials are passivated using atomic hydrogen generated by an rf plasma. The infrared (IR) spectra of hydrogenated samples are studied for a wide range of substrate temperatures and hydrogen gas pressure. The vibrational spectra display modes at 650 and 2040 cm−1 which can be characterized as predominantly hydrogen motions. Analysis of these modes show association with. the SiH bonds. The effect of hydrogen on the photovoltaic properties of poly‐Si‐metal‐insulator‐semiconductor solar cells is also studied. Solar cell characteristics are significantly improved after passivation of the grain boundaries for previously annealed Wacker poly‐Si. The detrimental effects of annealing the as‐received Wacker poly‐Si samples are also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 745-749 |
| Number of pages | 5 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 72 |
| Issue number | 2 |
| DOIs | |
| State | Published - Aug 16 1982 |
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