The properties of MOS structures using conjugated polymers as the semiconductor

Giles Lloyd; Munira Raja; Ian Sellers; Naser Sedghi; Raffaella Di Lucrezia; Simon Higgins; Bill Eccleston

doi:10.1016/S0167-9317(01)00617-7

The properties of MOS structures using conjugated polymers as the semiconductor

Giles Lloyd
, Munira Raja
, Ian Sellers
, Naser Sedghi
, Raffaella Di Lucrezia
, Simon Higgins
, Bill Eccleston

Department of Electrical Engineering

University of Liverpool

Research output: Contribution to journal › Conference article › peer-review

23 Scopus citations

Abstract

Data is presented from electrical measurements on MOS structures using the conjugated polymer regioregular poly-3-hexyl-thiophene (P3HT), a derivative of polythiophene. Improvement of the molecular mass and chain length is achieved using a process of fractionation. This is expected to produce an improvement in the electronic properties of the polymer. Comparison between fractionated and unfractionated P3HT on both MOS and TFT devices is presented. Metal contacts to P3HT are also studied with the formation of Schottky barriers readily observed. Current is found to fit standard theory and allows calculation of dopant levels and barrier heights all of which show good agreement with the ideal theory.

Original language	English
Pages (from-to)	323-328
Number of pages	6
Journal	Microelectronic Engineering
Volume	59
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(01)00617-7
State	Published - Nov 2001
Event	12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy Duration: Jun 20 2001 → Jun 23 2001

Keywords

Conjugated polymer
P3HT
Schottky barriers
TFTs

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10.1016/S0167-9317(01)00617-7

Cite this

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title = "The properties of MOS structures using conjugated polymers as the semiconductor",

abstract = "Data is presented from electrical measurements on MOS structures using the conjugated polymer regioregular poly-3-hexyl-thiophene (P3HT), a derivative of polythiophene. Improvement of the molecular mass and chain length is achieved using a process of fractionation. This is expected to produce an improvement in the electronic properties of the polymer. Comparison between fractionated and unfractionated P3HT on both MOS and TFT devices is presented. Metal contacts to P3HT are also studied with the formation of Schottky barriers readily observed. Current is found to fit standard theory and allows calculation of dopant levels and barrier heights all of which show good agreement with the ideal theory.",

keywords = "Conjugated polymer, P3HT, Schottky barriers, TFTs",

author = "Giles Lloyd and Munira Raja and Ian Sellers and Naser Sedghi and \{Di Lucrezia\}, Raffaella and Simon Higgins and Bill Eccleston",

year = "2001",

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T1 - The properties of MOS structures using conjugated polymers as the semiconductor

AU - Lloyd, Giles

AU - Raja, Munira

AU - Sellers, Ian

AU - Sedghi, Naser

AU - Di Lucrezia, Raffaella

AU - Higgins, Simon

AU - Eccleston, Bill

PY - 2001/11

Y1 - 2001/11

N2 - Data is presented from electrical measurements on MOS structures using the conjugated polymer regioregular poly-3-hexyl-thiophene (P3HT), a derivative of polythiophene. Improvement of the molecular mass and chain length is achieved using a process of fractionation. This is expected to produce an improvement in the electronic properties of the polymer. Comparison between fractionated and unfractionated P3HT on both MOS and TFT devices is presented. Metal contacts to P3HT are also studied with the formation of Schottky barriers readily observed. Current is found to fit standard theory and allows calculation of dopant levels and barrier heights all of which show good agreement with the ideal theory.

AB - Data is presented from electrical measurements on MOS structures using the conjugated polymer regioregular poly-3-hexyl-thiophene (P3HT), a derivative of polythiophene. Improvement of the molecular mass and chain length is achieved using a process of fractionation. This is expected to produce an improvement in the electronic properties of the polymer. Comparison between fractionated and unfractionated P3HT on both MOS and TFT devices is presented. Metal contacts to P3HT are also studied with the formation of Schottky barriers readily observed. Current is found to fit standard theory and allows calculation of dopant levels and barrier heights all of which show good agreement with the ideal theory.

KW - Conjugated polymer

KW - P3HT

KW - Schottky barriers

KW - TFTs

UR - https://www.scopus.com/pages/publications/0035498494

U2 - 10.1016/S0167-9317(01)00617-7

DO - 10.1016/S0167-9317(01)00617-7

M3 - Conference article

AN - SCOPUS:0035498494

SN - 0167-9317

VL - 59

SP - 323

EP - 328

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

T2 - 12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001)

Y2 - 20 June 2001 through 23 June 2001

ER -

The properties of MOS structures using conjugated polymers as the semiconductor

Abstract

Keywords

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