The Performance of Impatt Diodes Under the Influence of High-Intensity Gamma and Neutron Radiation

Wayne A. Anderson

doi:10.1109/PROC.1969.7295

The Performance of Impatt Diodes Under the Influence of High-Intensity Gamma and Neutron Radiation

Wayne A. Anderson

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Impatt diodes were tested under the influence of up to 1.5 x107 R/h gamma radiation and 3 x1012N/cm2 fast neutrons. Major changes were noted in power output, frequency spectrum, and current-voltage characteristics. Permanent damage and total failure resulted from this test.

Original language	English
Pages (from-to)	1441-1442
Number of pages	2
Journal	Proceedings of the IEEE
Volume	57
Issue number	8
DOIs	https://doi.org/10.1109/PROC.1969.7295
State	Published - 1969

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title = "The Performance of Impatt Diodes Under the Influence of High-Intensity Gamma and Neutron Radiation",

abstract = "Impatt diodes were tested under the influence of up to 1.5 x107 R/h gamma radiation and 3 x1012N/cm2 fast neutrons. Major changes were noted in power output, frequency spectrum, and current-voltage characteristics. Permanent damage and total failure resulted from this test.",

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AB - Impatt diodes were tested under the influence of up to 1.5 x107 R/h gamma radiation and 3 x1012N/cm2 fast neutrons. Major changes were noted in power output, frequency spectrum, and current-voltage characteristics. Permanent damage and total failure resulted from this test.

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DO - 10.1109/PROC.1969.7295

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JO - Proceedings of the IEEE

JF - Proceedings of the IEEE

IS - 8

ER -

The Performance of Impatt Diodes Under the Influence of High-Intensity Gamma and Neutron Radiation

Abstract

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