The Performance of IMPATT Diodes Under the Influence of Gamma Radiation

Wayne A. Anderson

doi:10.1109/PROC.1969.7121

The Performance of IMPATT Diodes Under the Influence of Gamma Radiation

Wayne A. Anderson

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

IMPATT diodes have been tested under the influence of 1.S5x1OS R/h gamma radiation from a 1.5-MeV Van de Graaf generator. No measurable change in performance has been observed during or after irradiation. A 100 to 300-fold increase in bias current was measured in the preavalanche region of operation.

Original language	English
Pages (from-to)	852-853
Number of pages	2
Journal	Proceedings of the IEEE
Volume	57
Issue number	5
DOIs	https://doi.org/10.1109/PROC.1969.7121
State	Published - 1969

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10.1109/PROC.1969.7121

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title = "The Performance of IMPATT Diodes Under the Influence of Gamma Radiation",

abstract = "IMPATT diodes have been tested under the influence of 1.S5x1OS R/h gamma radiation from a 1.5-MeV Van de Graaf generator. No measurable change in performance has been observed during or after irradiation. A 100 to 300-fold increase in bias current was measured in the preavalanche region of operation.",

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year = "1969",

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AB - IMPATT diodes have been tested under the influence of 1.S5x1OS R/h gamma radiation from a 1.5-MeV Van de Graaf generator. No measurable change in performance has been observed during or after irradiation. A 100 to 300-fold increase in bias current was measured in the preavalanche region of operation.

UR - https://www.scopus.com/pages/publications/84936893672

U2 - 10.1109/PROC.1969.7121

DO - 10.1109/PROC.1969.7121

M3 - Article

AN - SCOPUS:84936893672

SN - 0018-9219

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SP - 852

EP - 853

JO - Proceedings of the IEEE

JF - Proceedings of the IEEE

IS - 5

ER -

The Performance of IMPATT Diodes Under the Influence of Gamma Radiation

Abstract

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