Abstract
Recent advances in the area of ZnSe-based blue-green laser diodes are reviewed. We will discuss the solutions to some long-standing problems which for many years stood in the way of successful development of these devices, such as the choice of the quantum well structure for the active region, doping of ZnSe and ohmic contacts. We also address the problems that are responsible for the still very short lifetimes of blue-green laser diodes at the present stage of development, which still need to be overcome before these devices can be applied in practical situations.
| Original language | English |
|---|---|
| Article number | 001 |
| Pages (from-to) | 1041-1048 |
| Number of pages | 8 |
| Journal | Semiconductor Science and Technology |
| Volume | 10 |
| Issue number | 8 |
| DOIs | |
| State | Published - 1995 |
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