The fabrication of sub-micron width mesas in GaAs/Ga1-xAl xAs heterojunction material

K. M. Hutchings; A. D.C. Grassie; M. Lakrimi; J. Bird

doi:10.1088/0268-1242/3/10/017

The fabrication of sub-micron width mesas in GaAs/Ga_1-xAl _xAs heterojunction material

K. M. Hutchings
, A. D.C. Grassie
, M. Lakrimi
, J. Bird

Department of Electrical Engineering

University of Sussex

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

A method for the fabrication of sub-micron width mesas of GaAs/Ga _1-xAl_xAs heterojunction material is presented. The technique employs optical lithography and wet etching and is considered to cause minimal damage to the material. The exceptionally smooth etch surfaces obtained make the structures highly suitable for the study of quasi-one-dimensional transport phenomena.

Original language	English
Article number	017
Pages (from-to)	1057-1059
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	3
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/3/10/017
State	Published - 1988

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10.1088/0268-1242/3/10/017

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title = "The fabrication of sub-micron width mesas in GaAs/Ga1-xAl xAs heterojunction material",

abstract = "A method for the fabrication of sub-micron width mesas of GaAs/Ga 1-xAlxAs heterojunction material is presented. The technique employs optical lithography and wet etching and is considered to cause minimal damage to the material. The exceptionally smooth etch surfaces obtained make the structures highly suitable for the study of quasi-one-dimensional transport phenomena.",

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AU - Hutchings, K. M.

AU - Grassie, A. D.C.

AU - Lakrimi, M.

AU - Bird, J.

PY - 1988

Y1 - 1988

N2 - A method for the fabrication of sub-micron width mesas of GaAs/Ga 1-xAlxAs heterojunction material is presented. The technique employs optical lithography and wet etching and is considered to cause minimal damage to the material. The exceptionally smooth etch surfaces obtained make the structures highly suitable for the study of quasi-one-dimensional transport phenomena.

AB - A method for the fabrication of sub-micron width mesas of GaAs/Ga 1-xAlxAs heterojunction material is presented. The technique employs optical lithography and wet etching and is considered to cause minimal damage to the material. The exceptionally smooth etch surfaces obtained make the structures highly suitable for the study of quasi-one-dimensional transport phenomena.

UR - https://www.scopus.com/pages/publications/36149031423

U2 - 10.1088/0268-1242/3/10/017

DO - 10.1088/0268-1242/3/10/017

M3 - Article

AN - SCOPUS:36149031423

SN - 0268-1242

VL - 3

SP - 1057

EP - 1059

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 10

M1 - 017

ER -

The fabrication of sub-micron width mesas in GaAs/Ga_1-xAl _xAs heterojunction material

Abstract

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