The effect of an InP cap layer on the photoluminescence of an InxGa1-xAs1-yPy/InzAl1- zAs quantum well heterostructure

Hamidreza Esmaielpour; Vincent R. Whiteside; Louise C. Hirst; Joseph G. Tischler; Robert J. Walters; Ian R. Sellers

doi:10.1063/1.4985614

The effect of an InP cap layer on the photoluminescence of an In_xGa_1-xAs_1-yP_y/In_zAl_1- _zAs quantum well heterostructure

Hamidreza Esmaielpour
, Vincent R. Whiteside
, Louise C. Hirst
, Joseph G. Tischler
, Robert J. Walters
, Ian R. Sellers

Department of Electrical Engineering

University of Oklahoma
Naval Research Laboratory

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The effect of an InP cap on the photoluminescence (PL) spectrum of an InGaAsP/InAlAs quantum well (QW) is investigated using excitation power and temperature dependent PL. An as-grown sample with the InP cap layer shows an inverted interface created between InP and InAlAs that has a transition energy very close to the transition energy of the QW; consequently, there is an overlap between them. On the other hand, the QW sample with the cap layer etched away does not have a feature due to the inverted interface; even at very low power, the only observed feature is due to the QW transition.

Original language	English
Article number	235301
Journal	Journal of Applied Physics
Volume	121
Issue number	23
DOIs	https://doi.org/10.1063/1.4985614
State	Published - Jun 21 2017

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title = "The effect of an InP cap layer on the photoluminescence of an InxGa1-xAs1-yPy/InzAl1- zAs quantum well heterostructure",

abstract = "The effect of an InP cap on the photoluminescence (PL) spectrum of an InGaAsP/InAlAs quantum well (QW) is investigated using excitation power and temperature dependent PL. An as-grown sample with the InP cap layer shows an inverted interface created between InP and InAlAs that has a transition energy very close to the transition energy of the QW; consequently, there is an overlap between them. On the other hand, the QW sample with the cap layer etched away does not have a feature due to the inverted interface; even at very low power, the only observed feature is due to the QW transition.",

author = "Hamidreza Esmaielpour and Whiteside, \{Vincent R.\} and Hirst, \{Louise C.\} and Tischler, \{Joseph G.\} and Walters, \{Robert J.\} and Sellers, \{Ian R.\}",

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doi = "10.1063/1.4985614",

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T1 - The effect of an InP cap layer on the photoluminescence of an InxGa1-xAs1-yPy/InzAl1- zAs quantum well heterostructure

AU - Esmaielpour, Hamidreza

AU - Whiteside, Vincent R.

AU - Hirst, Louise C.

AU - Tischler, Joseph G.

AU - Walters, Robert J.

AU - Sellers, Ian R.

PY - 2017/6/21

Y1 - 2017/6/21

N2 - The effect of an InP cap on the photoluminescence (PL) spectrum of an InGaAsP/InAlAs quantum well (QW) is investigated using excitation power and temperature dependent PL. An as-grown sample with the InP cap layer shows an inverted interface created between InP and InAlAs that has a transition energy very close to the transition energy of the QW; consequently, there is an overlap between them. On the other hand, the QW sample with the cap layer etched away does not have a feature due to the inverted interface; even at very low power, the only observed feature is due to the QW transition.

AB - The effect of an InP cap on the photoluminescence (PL) spectrum of an InGaAsP/InAlAs quantum well (QW) is investigated using excitation power and temperature dependent PL. An as-grown sample with the InP cap layer shows an inverted interface created between InP and InAlAs that has a transition energy very close to the transition energy of the QW; consequently, there is an overlap between them. On the other hand, the QW sample with the cap layer etched away does not have a feature due to the inverted interface; even at very low power, the only observed feature is due to the QW transition.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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M1 - 235301

ER -

The effect of an InP cap layer on the photoluminescence of an In_xGa_1-xAs_1-yP_y/In_zAl_1- _zAs quantum well heterostructure

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