The Ebers-Moll model for magnetic bipolar transistors

Jaroslav Fabian; I. Žutić

doi:10.1063/1.1886251

The Ebers-Moll model for magnetic bipolar transistors

Jaroslav Fabian
, I. Žutić

Physics

University of Graz
University of Regensburg

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The equivalent electrical circuit of the Ebers-Moll-type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A classification scheme of the operating modes of magnetic bipolar transistors in the low bias regime is presented.

Original language	English
Article number	133506
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	13
DOIs	https://doi.org/10.1063/1.1886251
State	Published - Mar 28 2005

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10.1063/1.1886251

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abstract = "The equivalent electrical circuit of the Ebers-Moll-type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A classification scheme of the operating modes of magnetic bipolar transistors in the low bias regime is presented.",

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AB - The equivalent electrical circuit of the Ebers-Moll-type is introduced for magnetic bipolar transistors. In addition to conventional diodes and current sources, the new circuit comprises two novel elements due to spin-charge coupling. A classification scheme of the operating modes of magnetic bipolar transistors in the low bias regime is presented.

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The Ebers-Moll model for magnetic bipolar transistors

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