Terahertz and infrared detectors based on graphene structures

Victor Ryzhii; Maxim Ryzhii; Nadezhda Ryabova; Vladimir Mitin; Taiichi Otsuji

doi:10.1016/j.infrared.2010.12.034

Terahertz and infrared detectors based on graphene structures

Victor Ryzhii
, Maxim Ryzhii
, Nadezhda Ryabova
, Vladimir Mitin
, Taiichi Otsuji

Department of Electrical Engineering

The University of Aizu
Japan Science and Technology Agency
Tohoku University

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We consider newly proposed terahertz and infrared interband detectors based on multiple-graphene-layer structures with p-i-n junctions. Using the developed device model, we calculate the photodetector characteristics (responsivity and dark current limited detectivity) and compare them with the characteristics of other photodetectors. It is shown that due to relatively high quantum efficiency and weakened thermogeneration processes, the detectors under consideration can exhibit superior performance.

Original language	English
Pages (from-to)	302-305
Number of pages	4
Journal	Infrared Physics and Technology
Volume	54
Issue number	3
DOIs	https://doi.org/10.1016/j.infrared.2010.12.034
State	Published - May 2011

Keywords

Dark current
Detectivity
Detector
Graphene
Photocurrent
Responsivity

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10.1016/j.infrared.2010.12.034

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abstract = "We consider newly proposed terahertz and infrared interband detectors based on multiple-graphene-layer structures with p-i-n junctions. Using the developed device model, we calculate the photodetector characteristics (responsivity and dark current limited detectivity) and compare them with the characteristics of other photodetectors. It is shown that due to relatively high quantum efficiency and weakened thermogeneration processes, the detectors under consideration can exhibit superior performance.",

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AU - Ryzhii, Victor

AU - Ryzhii, Maxim

AU - Ryabova, Nadezhda

AU - Mitin, Vladimir

AU - Otsuji, Taiichi

PY - 2011/5

Y1 - 2011/5

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AB - We consider newly proposed terahertz and infrared interband detectors based on multiple-graphene-layer structures with p-i-n junctions. Using the developed device model, we calculate the photodetector characteristics (responsivity and dark current limited detectivity) and compare them with the characteristics of other photodetectors. It is shown that due to relatively high quantum efficiency and weakened thermogeneration processes, the detectors under consideration can exhibit superior performance.

KW - Dark current

KW - Detectivity

KW - Detector

KW - Graphene

KW - Photocurrent

KW - Responsivity

UR - https://www.scopus.com/pages/publications/79955031859

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DO - 10.1016/j.infrared.2010.12.034

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IS - 3

ER -

Terahertz and infrared detectors based on graphene structures

Abstract

Keywords

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