Abstract
We use photoluminescence to study the time-average energy distribution of electrons in the presence of strong steady-state drive at terahertz (THz) frequencies, in a modulation-doped 125 Å AlGaAs/GaAs square well that is held at low lattice temperature TL. We find that the energy distribution can be characterized by an effective electron temperature, Te(≳TL), that agrees well with values estimated from the THz-illuminated, dc conductivity. This agreement indicates that under strong THz drive, LO phonon scattering dominates both energy and momentum relaxation; that the carrier distribution maintains a heated, thermal form; and that phonon drift effects are negligible.
| Original language | English |
|---|---|
| Pages (from-to) | 829-831 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 68 |
| Issue number | 6 |
| DOIs | |
| State | Published - 1996 |
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