Temperature-dependent strain relaxation and islanding of Ge/Si(111)

P. W. Deelman; L. J. Schowalter; T. Thundat

Temperature-dependent strain relaxation and islanding of Ge/Si(111)

P. W. Deelman
, L. J. Schowalter
, T. Thundat

Department of Chemical and Biological Engineering

Rensselaer Polytechnic Institute

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The strain relaxation and clustering of Ge grown on Si(111) by molecular beam epitaxy (MBE) have been studied with in situ reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and Rutherford backscattering spectrometry (RBS). With this study, a better understanding of GE island nucleation and evolution has been achieved. Furthermore, the study also enabled to tailor the size and density of the nanocrystals by controlling thermodynamics and kinetics.

Original language	English
Pages (from-to)	227-232
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	417
State	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 27 1995 → Dec 1 1995

Cite this

@article{536882e969ec41faa3902239e796add2,

title = "Temperature-dependent strain relaxation and islanding of Ge/Si(111)",

abstract = "The strain relaxation and clustering of Ge grown on Si(111) by molecular beam epitaxy (MBE) have been studied with in situ reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and Rutherford backscattering spectrometry (RBS). With this study, a better understanding of GE island nucleation and evolution has been achieved. Furthermore, the study also enabled to tailor the size and density of the nanocrystals by controlling thermodynamics and kinetics.",

author = "Deelman, \{P. W.\} and Schowalter, \{L. J.\} and T. Thundat",

year = "1996",

language = "English",

volume = "417",

pages = "227--232",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 27-11-1995 Through 01-12-1995",

}

TY - JOUR

T1 - Temperature-dependent strain relaxation and islanding of Ge/Si(111)

AU - Deelman, P. W.

AU - Schowalter, L. J.

AU - Thundat, T.

PY - 1996

Y1 - 1996

N2 - The strain relaxation and clustering of Ge grown on Si(111) by molecular beam epitaxy (MBE) have been studied with in situ reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and Rutherford backscattering spectrometry (RBS). With this study, a better understanding of GE island nucleation and evolution has been achieved. Furthermore, the study also enabled to tailor the size and density of the nanocrystals by controlling thermodynamics and kinetics.

AB - The strain relaxation and clustering of Ge grown on Si(111) by molecular beam epitaxy (MBE) have been studied with in situ reflection high energy electron diffraction (RHEED), atomic force microscopy (AFM), and Rutherford backscattering spectrometry (RBS). With this study, a better understanding of GE island nucleation and evolution has been achieved. Furthermore, the study also enabled to tailor the size and density of the nanocrystals by controlling thermodynamics and kinetics.

UR - https://www.scopus.com/pages/publications/0029720032

M3 - Conference article

AN - SCOPUS:0029720032

SN - 0272-9172

VL - 417

SP - 227

EP - 232

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 27 November 1995 through 1 December 1995

ER -

Temperature-dependent strain relaxation and islanding of Ge/Si(111)

Abstract

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