Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

Ke Zeng; Uttam Singisetti

doi:10.1063/1.4991400

Temperature dependent quasi-static capacitance-voltage characterization of SiO₂/β-Ga₂O₃ interface on different crystal orientations

Ke Zeng
, Uttam Singisetti

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The interface trap density (D_it) of the SiO₂/β-Ga₂O₃ interface in (201), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of D_it in the bandgap. At room temperature, higher D_it is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the D_it value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

Original language	English
Article number	122108
Journal	Applied Physics Letters
Volume	111
Issue number	12
DOIs	https://doi.org/10.1063/1.4991400
State	Published - Sep 18 2017

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10.1063/1.4991400

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title = "Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations",

abstract = "The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in (201), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.",

author = "Ke Zeng and Uttam Singisetti",

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T1 - Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

AU - Zeng, Ke

AU - Singisetti, Uttam

PY - 2017/9/18

Y1 - 2017/9/18

N2 - The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in (201), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

AB - The interface trap density (Dit) of the SiO2/β-Ga2O3 interface in (201), (010), and (001) orientations is obtained by the Hi-Lo method with the low frequency capacitance measured using the Quasi-Static Capacitance-Voltage (QSCV) technique. QSCV measurements are carried out at higher temperatures to increase the measured energy range of Dit in the bandgap. At room temperature, higher Dit is observed near the band edge for all three orientations. The measurement at higher temperatures led to an annealing effect that reduced the Dit value for all samples. Comparison with the conductance method and frequency dispersion of the capacitance suggests that the traps at the band edge are slow traps which respond to low frequency signals.

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VL - 111

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122108

ER -

Temperature dependent quasi-static capacitance-voltage characterization of SiO₂/β-Ga₂O₃ interface on different crystal orientations

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Temperature dependent quasi-static capacitance-voltage characterization of SiO2/β-Ga2O3 interface on different crystal orientations

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Temperature dependent quasi-static capacitance-voltage characterization of SiO₂/β-Ga₂O₃ interface on different crystal orientations