Temperature-dependent leakage mechanisms of BiFeO3 films

H. Yang; M. Jain; H. Zhou; H. M. Luo; Q. X. Jia

doi:10.1109/ISAF.2008.4693776

Temperature-dependent leakage mechanisms of BiFeO3 films

H. Yang
, M. Jain
, H. Zhou
, H. M. Luo
, Q. X. Jia

Department of Materials Design and Innovation

Los Alamos National Laboratory

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on conductive SrRuO3 (SRO) on (001) SrTiO3 substrates by pulsed laser deposition. A Pt/BFO/SRO capacitor was constructed by depositing a top Pt electrode. The leakage current density vs. electric field characteristics were investigated from 80 to 350 K. It was found that the leakage mechanisms were a strong function of temperature and voltage polarity. At temperatures between 80 and 150 K, space-charge-limited current was the dominant leakage mechanism for both negative and positive bias. On the other hand, at temperatures between 200 and 350 K the dominant leakage mechanisms were Poole-Frenkle emission and Fowler-Nordheim tunneling for negative and positive bias, respectively.Ü.

Original language	English
Title of host publication	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
DOIs	https://doi.org/10.1109/ISAF.2008.4693776
State	Published - 2008
Event	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 - Santa Fe, NM, United States Duration: Feb 23 2008 → Feb 28 2008

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics
Volume	3

Conference

Conference	17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008
Country/Territory	United States
City	Santa Fe, NM
Period	02/23/08 → 02/28/08

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10.1109/ISAF.2008.4693776

Cite this

@inproceedings{23f06ca3d51c4461acf61b3135618597,

title = "Temperature-dependent leakage mechanisms of BiFeO3 films",

abstract = "Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on conductive SrRuO3 (SRO) on (001) SrTiO3 substrates by pulsed laser deposition. A Pt/BFO/SRO capacitor was constructed by depositing a top Pt electrode. The leakage current density vs. electric field characteristics were investigated from 80 to 350 K. It was found that the leakage mechanisms were a strong function of temperature and voltage polarity. At temperatures between 80 and 150 K, space-charge-limited current was the dominant leakage mechanism for both negative and positive bias. On the other hand, at temperatures between 200 and 350 K the dominant leakage mechanisms were Poole-Frenkle emission and Fowler-Nordheim tunneling for negative and positive bias, respectively.{\"U}.",

author = "H. Yang and M. Jain and H. Zhou and Luo, \{H. M.\} and Jia, \{Q. X.\}",

year = "2008",

doi = "10.1109/ISAF.2008.4693776",

language = "English",

isbn = "1424427444",

series = "IEEE International Symposium on Applications of Ferroelectrics",

booktitle = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008",

note = "17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008 ; Conference date: 23-02-2008 Through 28-02-2008",

}

Yang, H, Jain, M, Zhou, H, Luo, HM & Jia, QX 2008, Temperature-dependent leakage mechanisms of BiFeO3 films. in 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008., 4693776, IEEE International Symposium on Applications of Ferroelectrics, vol. 3, 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008, Santa Fe, NM, United States, 02/23/08. https://doi.org/10.1109/ISAF.2008.4693776

Temperature-dependent leakage mechanisms of BiFeO3 films. / Yang, H.; Jain, M.; Zhou, H. et al.
17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008. 2008. 4693776 (IEEE International Symposium on Applications of Ferroelectrics; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Temperature-dependent leakage mechanisms of BiFeO3 films

AU - Yang, H.

AU - Jain, M.

AU - Zhou, H.

AU - Luo, H. M.

AU - Jia, Q. X.

PY - 2008

Y1 - 2008

N2 - Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on conductive SrRuO3 (SRO) on (001) SrTiO3 substrates by pulsed laser deposition. A Pt/BFO/SRO capacitor was constructed by depositing a top Pt electrode. The leakage current density vs. electric field characteristics were investigated from 80 to 350 K. It was found that the leakage mechanisms were a strong function of temperature and voltage polarity. At temperatures between 80 and 150 K, space-charge-limited current was the dominant leakage mechanism for both negative and positive bias. On the other hand, at temperatures between 200 and 350 K the dominant leakage mechanisms were Poole-Frenkle emission and Fowler-Nordheim tunneling for negative and positive bias, respectively.Ü.

AB - Epitaxial c-axis oriented BiFeO3 (BFO) thin films were deposited on conductive SrRuO3 (SRO) on (001) SrTiO3 substrates by pulsed laser deposition. A Pt/BFO/SRO capacitor was constructed by depositing a top Pt electrode. The leakage current density vs. electric field characteristics were investigated from 80 to 350 K. It was found that the leakage mechanisms were a strong function of temperature and voltage polarity. At temperatures between 80 and 150 K, space-charge-limited current was the dominant leakage mechanism for both negative and positive bias. On the other hand, at temperatures between 200 and 350 K the dominant leakage mechanisms were Poole-Frenkle emission and Fowler-Nordheim tunneling for negative and positive bias, respectively.Ü.

UR - https://www.scopus.com/pages/publications/58149516293

U2 - 10.1109/ISAF.2008.4693776

DO - 10.1109/ISAF.2008.4693776

M3 - Conference contribution

AN - SCOPUS:58149516293

SN - 1424427444

SN - 9781424427444

T3 - IEEE International Symposium on Applications of Ferroelectrics

BT - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

T2 - 17th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2008

Y2 - 23 February 2008 through 28 February 2008

ER -

Temperature-dependent leakage mechanisms of BiFeO3 films

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