Temperature dependent characterization of Ga₂O₃ MOSFETs with Spin-on-Glass source/drain doping

β-Gallium oxide (Ga₂O₃) is an increasingly attractive choice for next generation power electronics applications due to its large bandgap, good mobility giving rise to a high Baliga's figure of merit (BFoM), mature bulk and thin film growth technologies with excellent doping control over several orders [1-3]. Moreover, recent experimental MOSFETs have shown large breakdown voltages (750 V), large on current densities (0.6 A/mm), enhancement mode operation, and record high breakdown field strengths (3.8 MV/cm); all of which show the potential of the technology for high efficiency power devices. Source/drain (S/D) contact and access resistance need to be reduced in power devices to decrease the conduction losses. Si ion-implantation was used previously to reduce the source resistance. Alternatively, we have proposed a novel, simple and effective Sn-doped Spin-on-Glass (SOG) doping to achieve a high doping density at the surface, thus reducing the specific contact resistivity (ρ_c) [4]. A ρ_c of 2.1±1.4 × 10^-5 Ω·cm² was obtained for 20 nm ultra-shallow junctions which is comparable to ion-implanted S/D junctions. Large drain current density (40 mA/mm) was measured in MOSFETs with SOG S/D doping. Here, we report the temperature dependent characteristics of Ga₂O₃ MOSFETs with spin-on-glass S/D doping.