Temperature dependence of the polariton relaxation bottleneck in a GaN microcavity

We present an experimental study aimed to investigate discuss the possible presence of a phonon bottleneck in a GaN bulk microcavity. Clear anticrossing between the lower (LP) and upper polariton (UP) branches has been observed up to room temperature in photoluminescence (PL) by angular measurements with a Rabi splitting of the order of 30 meV. In order to determine the presence of a relaxation bottleneck, angular PL measurements have been performed at different temperatures for negative detuning. At low T the PL shows a clear maximum, at the angle corresponding to the resonance between the exciton and the photon modes, which is an experimental demonstration of the presence of a relaxation bottleneck. The PL enhancement in resonance condition is suppressed with increasing T and it almost disappears at room temperature. We therefore demonstrate that the exciton-phonon interaction washes out the polariton bottleneck in GaN MCs at room temperature.